M.J.H. van Dal

Gaziantep University — Turkey

Engineering · Physical Sciences

28h-index2.1kcitations80works0.02yr avg
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Research Topics

Semiconductor materials and devices(45), Advancements in Semiconductor Devices and Circuit Design(33), Semiconductor materials and interfaces(31), Intermetallics and Advanced Alloy Properties(15), Integrated Circuits and Semiconductor Failure Analysis(14)

Publications80 total

The Effect of Curcumin Supplementation on Irisin, Nesfatin-1, and Leptin Levels in Rats Subjected to Long-Term Treadmill Exercise
Annals of Applied Sport Science·2025Open Access
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
2018· 45 cited
High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates
IEEE Journal of the Electron Devices Society·2016· 20 citedOpen Access
InAs nanowire GAA n-MOSFETs with 12–15 nm diameter
2016· 18 cited
Germanium-based transistors for future high performance and low power logic applications
2015· 37 cited
Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization
IEEE Transactions on Electron Devices·2015· 21 cited
Ge n-channel FinFET with optimized gate stack and contacts
2014· 32 cited
Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping
IEEE Transactions on Electron Devices·2014· 67 cited
Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers
2013· 44 cited
InAs N-MOSFETs with record performance of I<inf>on</inf> = 600 μA/μm at I<inf>off</inf> = 100 nA/μm (V<inf>d</inf> = 0.5 V)
2013· 8 cited
High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates
Journal of Crystal Growth·2013· 8 cited
Strain and Conduction-Band Offset in Narrow n-type FinFETs
IEEE Transactions on Electron Devices·2013· 6 cited
Demonstration of scaled Ge p-channel FinFETs integrated on Si
2012· 43 cited
An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS
IEEE Electron Device Letters·2012· 40 cited
Extracting the conduction band offset in strained FinFETs from subthreshold-current measurements
2011· 2 cited
1mA/um-I ON strained SiGe 45% -IFQW pFETs with raised and embedded S/D
2011· 13 cited
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
IEEE Transactions on Electron Devices·2011· 36 citedOpen Access
Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B <b>28</b>, C1H5 (2010)]
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2010· 7 cited
Multi-V&lt;inf&gt;T&lt;/inf&gt; engineering in highly scaled CMOS bulk and FinFET devices through Ion Implantation into the metal gate stack featuring a 1.0nm EOT high-K oxide
2010· 5 cited
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2010· 31 cited
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Frequent Co-authors

G. Doornbos(15), G. Vellianitis(15), A.A. Kodentsov(14), F.J.J. van Loo(12), B. Duriez(12), A. Lauwers(11), J. A. Kittl(11), C. Vrancken(10), S. Biesemans(10), M. Jurczak(10), Liesbeth Witters(9), M. Passlack(9), Bartek Pawlak(8), C. Demeurisse(8), Ray Duffy(7), M. Kaiser(7), Nadine Collaert(7), R. Rooyackers(7), R.J.P. Lander(7), Małgorzata Pawlak(7)