H.‐J. Müssig

Institut für Solartechnologien (Germany) — Germany

Engineering · Physical Sciences

28h-index2.0kcitations89works0.02yr avg
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Research Topics

Semiconductor materials and devices(60), Electronic and Structural Properties of Oxides(21), Semiconductor materials and interfaces(20), Ferroelectric and Negative Capacitance Devices(14), Surface and Thin Film Phenomena(13)

Publications89 total

Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 7 cited
Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities
Journal of Applied Physics·2009· 8 cited
Publisher's Note: “Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study” [J. Appl. Phys. 105, 033512 (2009)]
Journal of Applied Physics·2009Open Access
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Journal of Applied Physics·2009· 105 cited
Dielectric constant and leakage of BaZrO3 films
Applied Physics Letters·2009· 30 cited
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications
Microelectronic Engineering·2009· 24 cited
The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors
Thin Solid Films·2009· 33 cited
Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study
Journal of Applied Physics·2009· 39 cited
Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 31 cited
Influence of the electrode material on HfO2 metal-insulator-metal capacitors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2009· 33 cited
On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2009· 23 cited
Dielectric and structural properties of thin SrHfO3 layers on TiN
Applied Physics Letters·2008· 39 cited
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
New Journal of Physics·2008· 28 citedOpen Access
Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications
IEEE Transactions on Electron Devices·2008· 18 cited
Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors
Journal of Applied Physics·2008· 57 cited
Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
Microelectronic Engineering·2008· 30 cited
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems
Journal of Applied Physics·2008· 32 citedOpen Access
Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy
Journal of Applied Physics·2008· 13 cited
Dielectric characteristics of amorphous and crystalline BaHfO<inf>3</inf> high-k layers on TiN for memory capacitor applications
2008· 4 cited
Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications
Applied Physics Letters·2008· 42 cited
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Frequent Co-authors

J. Da̧browski(27), Christian Wenger(18), P. Zaumseil(18), Thomas Schroeder(16), Grzegorz Łupina(10), G. Lippert(10), Mindaugas Lukosius(7), O. Seifarth(7), P. Storck(7), W. Arabczyk(7), Sergej Pasko(6), G. A. Wolff(5), H. J. Osten(5), Ch. Lohe(5), R. Sorge(5), G. Weidner(5), A. Giussani(5), Anil U. Mane(4), J. Dąbrowski(4), V. G. Zavodinsky(4)