H. J. Osten

Leibniz University Hannover — Germany

Engineering · Physical Sciences

37h-index3.4kcitations147works0.02yr avg
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Research Topics

Semiconductor materials and devices(86), Silicon and Solar Cell Technologies(42), Semiconductor materials and interfaces(34), Advancements in Semiconductor Devices and Circuit Design(33), Semiconductor Quantum Structures and Devices(27)

Publications147 total

Improvement of crystal quality and surface morphology of Ge/Gd<sub>2</sub>O<sub>3</sub>/Si(111) epitaxial layers by cyclic annealing and regrowth
Journal of Physics D Applied Physics·2021· 1 cited
Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters
IEEE Journal of Photovoltaics·2014· 13 cited
Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations
ECS Transactions·2010· 3 cited
Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations
ECS Meeting Abstracts·2010Open Access
Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si<sub>1−<i>y</i></sub>C<sub><i>y</i></sub>alloys on Si (0 0 1)
Semiconductor Science and Technology·2006· 3 cited
Optical Properties, Elasto-Optical Effects, and Critical-Point Parameters of Biaxially Stressed Si&gt;inf&lt;1-y&gt;/inf&lt;C&gt;inf&lt;y&gt;/inf&lt;Alloys on Si
2006 International SiGe Technology and Device Meeting·2006
Optical Properties, Elasto-Optical Effects, and Critical-Point Parameters of Biaxially Stressed Si<sub>1-y</sub>C<sub>y</sub> Alloys on Si
2006 International SiGe Technology and Device Meeting·2006· 1 cited
Epitaxial high-k dielectrics on silicon
2005· 1 cited
High-K Dielectrics: The Example of Pr2O3
Springer series in materials science·2004· 10 cited
Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification
2003· 48 cited
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules
2003· 6 cited
Carbon doped SiGe heterojunction bipolar transistors for high frequency applications
2003· 38 cited
SiGeC materials
2002· 1 cited
Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology
2002· 30 cited
Carbon doping of SiGe heterobipolar transistors
2002· 5 cited
The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
2002· 44 cited
Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
2002· 3 cited
Modeling the effect of carbon on boron diffusion
2002· 4 cited
Epitaxial praseodymium oxide: a new high-k dielectric
2002· 10 cited
High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
2002· 53 cited
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Frequent Co-authors

E. Bugiel(14), G. Lippert(13), P. Zaumseil(11), H. Rücker(9), B. Heinemann(7), D. Krüger(6), Cynthia J. Jameson(6), J. Klatt(6), Myeongcheol Kim(5), B. Dietrich(5), P. Gaworzewski(5), D. Knoll(5), H.‐J. Müssig(4), P. Schley(4), M. Methfessel(3), R. Kurps(3), Bernd Tillack(3), J. Da̧browski(2), K. Pressel(2), Gunter Fischer(2)