H. J. Osten

Leibniz University Hannover — Germany

Engineering · Physical Sciences

37h-index3.4kcitations147works0.02yr avg
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Research Topics

Semiconductor materials and devices(86), Silicon and Solar Cell Technologies(42), Semiconductor materials and interfaces(34), Advancements in Semiconductor Devices and Circuit Design(33), Semiconductor Quantum Structures and Devices(27)

Publications147 total

Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process
2002
Thermal stability of Pr2O3 films grown on Si(100) substrate
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2002· 14 cited
Photoemission and <i>ab initio</i> theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
Journal of Applied Physics·2002· 103 cited
Initial stages of praseodymium oxide film formation on Si()
Surface Science·2002· 37 cited
Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
Materials Science and Engineering B·2002· 19 cited
Growth of crystalline praseodymium oxide on silicon
Journal of Crystal Growth·2002· 38 cited
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions
Applied Physics Letters·2002· 93 cited
Carbon-containing heteroepitaxial silicon and silicon/germanium thin films on Si(001)
Elsevier eBooks·2002
Diffusion and electrical activity of copper in Si1−x−yGexCy alloys
Microelectronic Engineering·2002· 1 cited
Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Materials Science and Engineering B·2001· 5 cited
Epitaxial growth of praseodymium oxide on silicon
Materials Science and Engineering B·2001· 37 cited
The effects of proton irradiation on SiGe:C HBTs
IEEE Transactions on Nuclear Science·2001· 16 cited
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide
Microelectronics Reliability·2001· 22 cited
Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures
Journal of Materials Science Materials in Electronics·2001· 5 cited
Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe
Microelectronic Engineering·2001· 6 cited
Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon
Applied Physics Letters·2000· 31 cited
Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1−x Ge x , and Si 1−y C y base layers
Thin Solid Films·2000· 7 cited
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
Thin Solid Films·2000· 13 cited
Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon
Applied Physics Letters·2000· 19 cited
Band offset predictions for strained group IV alloys: Si<sub>1-<i>x</i>-<i>y</i></sub>Ge<sub><i>x</i></sub>C<sub><i>y</i></sub>on Si(001) and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>on Si<sub>1-<i>z</i></sub>Ge<sub><i>z</i></sub>(001)
Semiconductor Science and Technology·2000· 50 cited
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Frequent Co-authors

E. Bugiel(14), G. Lippert(13), P. Zaumseil(11), H. Rücker(9), B. Heinemann(7), D. Krüger(6), Cynthia J. Jameson(6), J. Klatt(6), Myeongcheol Kim(5), B. Dietrich(5), P. Gaworzewski(5), D. Knoll(5), H.‐J. Müssig(4), P. Schley(4), M. Methfessel(3), R. Kurps(3), Bernd Tillack(3), J. Da̧browski(2), K. Pressel(2), Gunter Fischer(2)