J. Klatt

Texas Instruments (United States) — United States

Engineering · Physical Sciences

13h-index612citations40works0.02yr avg
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Research Topics

Semiconductor materials and devices(24), Semiconductor Quantum Structures and Devices(15), Integrated Circuits and Semiconductor Failure Analysis(14), Ion-surface interactions and analysis(10), Silicon Nanostructures and Photoluminescence(7)

Publications40 total

Semiconductor Film Stack Interface Investigation via DSIMS & TOFSIMS Depth Profiling and HAXPES : Yield Enhancement/Learning
2023
Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by movcd and mombe
2020
Characterization of Doped Oxide Films PSG/BPSG/FSG via DSIMS in Order to Eliminate Nonzero Kilometer Failures from Semiconductors Used in Automotive Industry : Topic/category: Yield Enhancment/Advanced Metrology
2020
Bipolar NPN ICEO leakage due to PETEOS deposition
2017
Bipolar NPN ICEO leakage due to PETEOS deposition
2017
D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors
Surface and Interface Analysis·2010· 1 cited
Developing a high volume manufacturing method to eliminate P Buried Layer implant defects
2010
Developing a High Volume Manufacturing Wet Clean Process to Remove BF<sub>2</sub> Implant Induced Molybdenum Contamination
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2009· 1 cited
Silicide-related yield enhancement in a deep submicrometer CMOS process
2002· 1 cited
The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry
Journal of Crystal Growth·1996· 5 cited
Influence of interdiffusion and surfactants on Si/SiGe heterointerfaces
Applied Surface Science·1996· 2 cited
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
Elsevier eBooks·1996
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
Journal of Crystal Growth·1995· 13 cited
Temperature dependence of ion-beam mixing in III–V semiconductors
Journal of Applied Physics·1995· 14 cited
Surfactant-Mediated Growth of SiGe/Si Quantum-Well Structures Studied by Photoluminescence Technique and Secondary Ion Mass Spectrometry
MRS Proceedings·1995· 1 cited
<i>In situ</i> monitoring of strain relaxation during antimony-mediated growth of Ge and Ge<i>1−y</i> C<i>y</i> layers on Si(001) using reflection high energy electron diffraction
Applied Physics Letters·1994· 49 cited
Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant
Applied Physics Letters·1994· 12 cited
Interfacial damage in ion-irradiated GaAs/AlAs superlattices
Physical review. B, Condensed matter·1993· 19 cited
Radiation-induced segregation behavior in random and ordered face-centered cubic materials
Journal of Nuclear Materials·1993· 1 cited
Measurement of stress and relaxation in Si1−<i>x</i>Ge<i>x</i> layers by Raman line shift and x-ray diffraction
Journal of Applied Physics·1993· 70 cited
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Frequent Co-authors

H. J. Osten(11), J. J. Coleman(11), R. S. Averback(11), G. Lippert(9), E. Bugiel(9), R. P. Bryan(6), Thanas Budri(6), H.P. Zeindl(5), D. Krüger(5), L. M. Miller(4), S. Nilsson(4), R. Kurps(4), B. Dietrich(3), R. S. Averback(3), David V. Forbes(3), T.M. Cockerill(3), Akshey Sehgal(3), Scott Arsenault(3), Scott Ruby(3), J. Ramdani(3)