M. A. Capano

Engineering · Physical Sciences

23h-index2.5kcitations69works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(31), Semiconductor materials and devices(27), Graphene research and applications(15), Semiconductor materials and interfaces(15), Diamond and Carbon-based Materials Research(11)

Publications69 total

Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density
2019· 93 cited
High-mobility InAs two dimensional electron systems on GaSb substrates
Bulletin of the American Physical Society·2019
High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport
Physical Review Materials·2018· 39 citedOpen Access
Spin transport in epitaxial graphene on SiC (0001)
Bulletin of the American Physical Society·2013
Graphene field effect transistor as radiation sensor
2011· 23 cited
Graphene formation on step-free 4H-SiC(0001)
Journal of Applied Physics·2011· 13 citedOpen Access
Amorphous interface layer in thin graphite films grown on the carbon face of SiC
Applied Physics Letters·2011· 16 citedOpen Access
Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC
New Journal of Physics·2010· 21 citedOpen Access
(Invited) Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene
ECS Transactions·2010· 4 cited
Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
Journal of Electronic Materials·2010· 11 cited
Electronic Transport Properties in Top-Gated Epitaxial Graphene on Silicon Carbide with ALD Al2O3 High-K Dielectric
2010· 3 cited
Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001¯)
Applied Physics Letters·2010· 16 cited
Pronounced quantum hall-effect on epitaxial graphene up to 70K
2009
SpinFET on Epitaxial Graphene
2009
Foreword
Journal of Electronic Materials·2009Open Access
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
Journal of Electronic Materials·2009· 14 cited
Ballistic Transport of Narrow-Channeled Epitaxial Graphene
Bulletin of the American Physical Society·2008
Top-gated graphene field-effect-transistors formed by decomposition of SiC
Applied Physics Letters·2008· 220 citedOpen Access
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Applied Physics Letters·2008· 223 cited
Effects of Illumination on Ar+-Implanted n-Type 6H-SiC Epitaxial Layers
Journal of Electronic Materials·2007
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Frequent Co-authors

James A. Cooper(12), M. R. Melloch(8), M. L. Bolen(7), Kurt G. Eyink(5), T. W. Haas(5), Tian Shen(4), Robert Colby(4), Eric A. Stach(4), B. G. Streetman(4), Andrey A. Voevodin(3), J.S. Zabinski(3), R. Reifenberger(3), W. C. Mitchel(3), Scott D. Walck(3), Jiangjiang Gu(3), M.S. Donley(2), Yi Xuan(2), Yanqing Wu(2), Minghao Qi(2), P. D. Ye(2)