M. L. Bolen

National Renewable Energy Laboratory — United States

Materials Science · Physical Sciences

9h-index544citations15works0.02yr avg
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Research Topics

Graphene research and applications(12), Diamond and Carbon-based Materials Research(7), Carbon Nanotubes in Composites(5), Silicon Carbide Semiconductor Technologies(5), Silicon and Solar Cell Technologies(3)

Publications15 total

Hydrogenation of dislocation-limited heteroepitaxial silicon solar cells
2012· 1 citedOpen Access
Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint
University of North Texas Digital Library (University of North Texas)·2012Open Access
Graphene field effect transistor as radiation sensor
2011· 23 cited
Graphene formation on step-free 4H-SiC(0001)
Journal of Applied Physics·2011· 13 citedOpen Access
Amorphous interface layer in thin graphite films grown on the carbon face of SiC
Applied Physics Letters·2011· 16 citedOpen Access
Magneto-Transport on Epitaxial Graphene
Nanoscience and technology·2011
Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC
New Journal of Physics·2010· 21 citedOpen Access
(Invited) Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene
ECS Transactions·2010· 4 cited
Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
Journal of Electronic Materials·2010· 11 cited
AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC
Carbon·2010· 91 cited
Exploration of epitaxial graphene on silicon carbide
Purdue e-Pubs (Purdue University System)·2010
SpinFET on Epitaxial Graphene
2009
Graphene formation mechanisms on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>0001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>
Physical Review B·2009· 128 cited
Insights into few-layer epitaxial graphene growth on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>substrates from STM studies
Physical Review B·2009· 222 cited
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
Journal of Electronic Materials·2009· 14 cited

Frequent Co-authors

M. A. Capano(8), Michael A. Capano(4), Robert Colby(4), Eric A. Stach(4), R. Reifenberger(3), Jiangjiang Gu(3), Tian Shen(3), Laura Biedermann(2), Dmitry Zemlyanov(2), Gyan Prakash(2), Peide D. Ye(2), Sachit Grover(2), Charles W. Teplin(2), David C. Bobela(2), Howard M. Branz(2), Paul Stradins(2), S. E. Harrison(1), Amitkumar Patil(1), O. Koybasi(1), Gabriel A. López(1)