A. L. Shluger

University College London — United Kingdom

Engineering · Physical Sciences

24h-index1.6kcitations68works0.02yr avg
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Research Topics

Semiconductor materials and devices(13), Advanced Chemical Physics Studies(11), Force Microscopy Techniques and Applications(11), Surface and Thin Film Phenomena(10), Electronic and Structural Properties of Oxides(9)

Publications68 total

Electronic structure: Impurity and defect states in insulators
Elsevier eBooks·2023
Dynamic Effects: Adsorption of Organic Molecules at Insulating Surfaces
HAL (Le Centre pour la Communication Scientifique Directe)·2016
POSTER: Understanding Self-Assembly of Large Organic Molecules on Bulk Insulating Surfaces
2015
On the microscopic structure of hole traps in pMOSFETs
2014· 97 cited
From atoms to product reliability: toward a generalized multiscale simulation approach
Journal of Computational Electronics·2013· 7 cited
2nd TYC workshop on energy materials
Physical Chemistry Chemical Physics·2013
Role of applied bias and tip electronic structure in the scanning tunneling microscopy imaging of highly oriented pyrolytic graphite
Physical Review B·2012· 21 cited
Effect of surface oxidation on the nm-scale wear behavior of a metallic glass
Journal of Applied Physics·2011· 42 cited
From<i>ab initio</i>properties of the Si-SiO<sub>2</sub>interface, to electrical characteristics of metal-oxide-semiconductor devices
Journal of Physics Conference Series·2010· 6 citedOpen Access
van der Waalsおよびスピン分極効果を説明するグラファイトの表面および表面下欠陥の構造と性質
Physical Review B·2010· 3 cited
Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
IEEE Transactions on Nanotechnology·2009· 30 cited
Structure and spectroscopic properties of oxygen divacancy in yttrium-stabilized zirconia
Journal of Physics Conference Series·2008· 16 citedOpen Access
Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors
Physical Review E·2008· 3 cited
Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs
HAL (Le Centre pour la Communication Scientifique Directe)·2008· 5 cited
AN EFFECT OF CHARGED AND EXCITED STATES ON DECOMPOSITION OF 1,1-DIAMINO-2,2-DINITROETHYLENE
AIP conference proceedings·2007
‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices
2007
Building Blocks for Molecular Devices:  Organic Molecules on the MgO (001) Surface
The Journal of Physical Chemistry C·2007· 20 cited
Modeling HfO2/SiO2/Si interface
Microelectronic Engineering·2007· 28 cited
Dynamics of low-coordinated surface atoms on gold nanocrystallites
The Journal of Chemical Physics·2007· 13 cited
Structure and spectroscopic properties of trapped holes in silica
Journal of Non-Crystalline Solids·2007· 35 cited
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Frequent Co-authors

Peter V. Sushko(9), Adam S. Foster(8), Jacob Gavartin(8), Katsumi Tanimura(6), C. Richard A. Catlow(6), Noriaki Itoh(4), Lev Kantorovich(4), V. E. Puchin(3), Noriaki Itoh(3), Robin W. Grimes(3), V. E. Puchin(3), A. Asenov(3), Eugene V. Stefanovich(2), Michael Reichling(2), Julian D. Gale(2), G. Bersuker(2), N. N. Kovaleva(2), A. V. Boris(2), S. Iwai(2), T. Tokizaki(2)