Ming-Yih Kao

Engineering · Physical Sciences

23h-index1.9kcitations70works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(58), Semiconductor Quantum Structures and Devices(34), GaN-based semiconductor devices and materials(28), Semiconductor materials and devices(18), Microwave Engineering and Waveguides(14)

Publications70 total

Bayesian Inference for Decision Making
Digital Commons - USU (Utah State University)·2021Open Access
Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process
2016· 34 cited
Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology
2014· 2 cited
High efficiency Ka-band Gallium Nitride power amplifier MMICs
2013· 60 cited
A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology
2012· 58 cited
GaN Takes the Lead
IEEE Microwave Magazine·2012· 71 cited
High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process
2012· 48 cited
Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography
2012
High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process
2011· 20 cited
Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm
2010· 7 cited
Design and Performance of a High Efficiency Ka-Band Power Amplifier MMIC
2010· 8 cited
Multi-octave GaN MMIC amplifier
2010 IEEE MTT-S International Microwave Symposium·2010· 4 cited
Design considerations for GaN based MMICs
2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems·2009· 22 cited
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
IEEE Journal of Solid-State Circuits·2009· 154 cited
V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process
2009· 9 cited
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium·2008· 37 cited
Progress in GaN devices performances and reliability
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 1 cited
AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications
2007· 25 cited
High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K- and Ka-Band Applications
American Journal of Hematology·2007
forHPA andMulti-Function MMIC Applications
2007
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Frequent Co-authors

P.C. Chao(23), P.M. Smith(19), P. Ho(18), K.H.G. Duh(16), Charles F. Campbell(16), J. M. Ballingall(15), Sabyasachi Nayak(7), A.A. Jabra(6), D.C. Dumka(6), A.J. Tessmer(5), P. Saunier(5), Hua-Quen Tserng(4), A.W. Swanson(4), L. F. Lester(4), M.S. Heins(4), David Fanning(4), S.T. Fu(3), Cathy Lee(3), Edward Beam(3), R.P. Smith(3)