Jyotshna Bhandari

Siemens (Austria) — Austria

Engineering · Physical Sciences

3h-index43citations12works0.32yr avg
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Research Topics

Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(5), Multilevel Inverters and Converters(4), Silicon Carbide Semiconductor Technologies(4), Thin-Film Transistor Technologies(2)

Publications12 total

400 V SiC MOSFET Technology Empowering Innovative Three-Level Power Supplies for AI Servers
2025
400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
Power Electronic Devices and Components·2025· 1 citedOpen Access
400 V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
HAL (Le Centre pour la Communication Scientifique Directe)·2025Open Access
New 400 V SiC MOSFET and its use in Multi-Level Applications
2024
Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2011Open Access
Double-gate pentacene thin-film transistor with improved control in sub-threshold region
Solid-State Electronics·2010· 17 citedOpen Access
Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2010Open Access
Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs
2009· 1 citedOpen Access
Double-gate pentacene TFTs with improved control in subthreshold region
2009· 3 citedOpen Access
Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain
IEEE Electron Device Letters·2009· 17 cited
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Materials Science and Engineering B·2008· 4 citedOpen Access
Implantation through HfO<sub>2</sub>: Calibration of Simulation and Study on Hf Behavior during Implant
2008

Frequent Co-authors

Adrian M. Ionescu(4), M. Vinet(4), T. Poiroux(4), B. Prévitali(4), S. Deleonibus(4), Ralf Siemieniec(4), Martin Wattenberg(4), Sriram Jagannath(4), Heejae Shim(4), Alberto Pignatelli(3), Dimitrios Tsamados(2), Nenad V. Cvetkovic(2), Katrin Sidler(2), Veronica Savu(2), Juergen Brügger(2), Jean‐Paul Barnes(2), Ertugrul Kocaaga(2), Elvir Kahrimanovic(2), Matthias Kasper(2), A. M. Ionescu(2)