Heejae Shim

Siemens (Austria) — Austria

Physics and Astronomy · Physical Sciences

7h-index146citations25works0.32yr avg
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Research Topics

Magnetic properties of thin films(10), Semiconductor materials and devices(9), Physics of Superconductivity and Magnetism(5), GaN-based semiconductor devices and materials(4), Multilevel Inverters and Converters(4)

Publications25 total

400 V SiC MOSFET Technology Empowering Innovative Three-Level Power Supplies for AI Servers
2025
400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
Power Electronic Devices and Components·2025· 1 citedOpen Access
400 V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
HAL (Le Centre pour la Communication Scientifique Directe)·2025Open Access
New 400 V SiC MOSFET and its use in Multi-Level Applications
2024
High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN
Japanese Journal of Applied Physics·2014
High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i><sub>x</sub></i>surface passivation layer deposited by low pressure CVD
Japanese Journal of Applied Physics·2014· 22 cited
Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates
Solid-State Electronics·2014· 1 cited
Heteroepitaxial silicon film growth at 600°C from an Al–Si eutectic melt
Thin Solid Films·2010· 11 cited
Grain boundaries in the cuprate superconductors: tapes and tunneling spectroscopy
Superconductor Science and Technology·2010· 1 cited
Electron-Phonon Interactions in Superconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>La</mml:mi><mml:mn>1.84</mml:mn></mml:msub><mml:msub><mml:mi>Sr</mml:mi><mml:mn>0.16</mml:mn></mml:msub><mml:msub><mml:mi>CuO</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>Films
Physical Review Letters·2008· 41 cited
All MgB2 tunnel junctions with Al2O3 or MgO tunnel barriers
Applied Physics Letters·2007· 21 cited
All MgB$_{2}$ tunnel junction with Al$_{2}$O$_{3}$ tunnel barrier
Bulletin of the American Physical Society·2006
Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation
Journal of Applied Physics·2004
Direct Evidence for Ferromagnetism of Nanometer-Scale Palladium by Contact with Perovskite Manganite
Journal of the American Chemical Society·2004· 13 cited
Thickness dependence of magnetic coupling strength and thermal stability in a spin-dependent tunnel junction
physica status solidi (a)·2004· 1 citedOpen Access
Distribution of nitrogen in a magnetic tunnel junction with nitrogen-treated interface
Journal of Magnetism and Magnetic Materials·2004
Improvement of the reliability in magnetic tunnel junctions with annealing
한국자기학회 학술연구발표회 논문개요집·2003
Dependence of thermal stability on magnetic coupling in magnetic tunnel junction
한국자기학회 학술연구발표회 논문개요집·2003
Magnetic tunnel junctions with a tunnel barrier formed by N2O plasma
Applied Physics Letters·2003· 4 cited
Nitrogen effects on lowering specific junction resistance and suppressing Mn diffusion in a magnetic tunnel junction
Applied Physics Letters·2003· 1 cited
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Frequent Co-authors

Jin‐Tae Kim(8), B. K. Cho(4), Ralf Siemieniec(4), Martin Wattenberg(4), Sriram Jagannath(4), Jyotshna Bhandari(4), P. Chaudhari(3), Sung‐Woon Moon(3), Jong‐Sub Lee(3), Deokwon Seo(3), Sungdal Jung(3), Hong Goo Choi(3), J. S. Yim(3), J.K. Twynam(3), S. D. Roh(3), Injun Hwang(3), Yongsup Park(3), Alberto Pignatelli(3), Chunghee Nam(3), Jagadeesh S. Moodera(2)