Sungdal Jung

Korea Innotech (South Korea) — South Korea

Physics and Astronomy · Physical Sciences

4h-index231citations7works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(6), Semiconductor materials and devices(5), Ga2O3 and related materials(4), ZnO doping and properties(2), Advancements in Semiconductor Devices and Circuit Design(2)

Publications7 total

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN
Japanese Journal of Applied Physics·2014
High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i><sub>x</sub></i>surface passivation layer deposited by low pressure CVD
Japanese Journal of Applied Physics·2014· 22 cited
Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates
Solid-State Electronics·2014· 1 cited
600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes
IEEE Electron Device Letters·2014· 19 cited
Effect of Gate Insulator Thickness on Characteristics of Normally-off GaN MOSFETs
2012
Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET
IEEE Electron Device Letters·2011· 167 cited
Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs
Microelectronic Engineering·2011· 22 cited

Frequent Co-authors

Sung‐Woon Moon(4), Jong‐Sub Lee(4), Hong Goo Choi(4), J. S. Yim(4), J.K. Twynam(4), S. D. Roh(4), Ki-Won Kim(3), Dong‐Seok Kim(3), Hee‐Sung Kang(3), Ki‐Sik Im(3), Jung‐Hee Lee(3), Deokwon Seo(3), Heejae Shim(3), Dae‐Hyuk Kwon(2), Jaejoon Oh(1), Jong‐Bong Ha(1), Jaikwang Shin(1), Young-Ho Bae(1), S. Cristoloveanu(1), Deok Won Seo(1)