J. S. Yim

Korea Innotech (South Korea) — South Korea

Physics and Astronomy · Physical Sciences

7h-index223citations17works0.02yr avg

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Research Topics

Semiconductor Quantum Structures and Devices(13), GaN-based semiconductor devices and materials(5), Quantum Dots Synthesis And Properties(5), Semiconductor materials and devices(5), Semiconductor Lasers and Optical Devices(5)

Publications17 total

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN

Japanese Journal of Applied Physics·2014

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i><sub>x</sub></i>surface passivation layer deposited by low pressure CVD

22 cited

Japanese Journal of Applied Physics·2014· 22 cited

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

1 cited

Solid-State Electronics·2014· 1 cited

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

19 cited

IEEE Electron Device Letters·2014· 19 cited

Strong photoluminescence at 1.3μm with a narrow linewidth from nitridized InAs∕GaAs quantum dots

6 cited

Applied Physics Letters·2006· 6 cited

Unambiguous observation of electronic couplings between InGaAs∕InGaAsP quantum dots emitting at 1.5μm

8 cited

Applied Physics Letters·2006· 8 cited

Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5μm in continuous wave mode

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006

Semiconductor quantum dots emitting at 1.5 μm: optical properties and device applications

1 cited

Journal of the Korean Physical Society·2006· 1 cited

Experimental determination of electron and hole sublevels in modulation-doped InAs∕GaAs quantum dots

2 cited

Applied Physics Letters·2005· 2 cited

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

43 cited

Applied Physics Letters·2005· 43 cited

Convex-shaped decay curve of carriers in a vertically coupled InAs∕GaAs quantum dot

3 cited

Journal of Applied Physics·2005· 3 citedOpen Access

Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5 μm laser diodes

Microelectronics Journal·2005

InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at

17 cited

Physica E Low-dimensional Systems and Nanostructures·2003· 17 cited

Optical Characteristics of InAs/InGaAsP/InP Self-Assembled Quantum Dots Emitting at 1.4–1.6 µm

7 cited

Japanese Journal of Applied Physics·2002· 7 cited

Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

34 cited

Applied Physics Letters·2001· 34 cited

Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

54 cited

Applied Physics Letters·2001· 54 cited

Optical Characteristics of Self-Assembled InAs/GaAs Quantum Dots at Various Temperatures and Excitations

6 cited

Journal of the Korean Physical Society·2000· 6 cited

Frequent Co-authors

D. Lee(13), W. G. Jeong(7), S. H. Pyun(6), Y. D. Jang(6), Sung‐Woon Moon(4), Jong‐Sub Lee(4), Sungdal Jung(4), Hong Goo Choi(4), J.K. Twynam(4), S. D. Roh(4), Ja-Soon Jang(4), Deokwon Seo(3), Heejae Shim(3), Weon Guk Jeong(2), U. H. Lee(2), J. H. Lee(2), P.D. Dapkus(2), J. W. Jang(2), Jae‐Young Leem(2), D.K. Oh(2)