Jaejoon Oh

Sun Moon University — South Korea

Physics and Astronomy · Physical Sciences

12h-index883citations28works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(16), Semiconductor materials and devices(11), Ga2O3 and related materials(11), ZnO doping and properties(5), Silicon Carbide Semiconductor Technologies(4)

Publications28 total

Skin Wound Healing Effects of Pectinodesmus javanensis Extract through Activation of TGF-β/SMAD Signaling Pathway
2026Open Access
Anti-obesity Effects of Panax ginseng-derived exosomes via AMPK-mediated inhibition of adipocyte differentiation and lipogenesis
Natural Products and Bioprospecting·2026Open Access
Suppression of adipogenesis by Hydrangea serrata extract via inhibition of mTOR signaling and cytoskeletal remodeling
Biotechnology and Bioprocess Engineering·2025
Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT
IEEE Electron Device Letters·2022· 25 cited
Table of Contents
2022Open Access
A Pathway to Improve the Reliability of p-GaN Gate HEMTs through Buffer Hole Accumulation
2022· 1 cited
N2O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs
Applied Physics Letters·2022· 7 cited
Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement
IEEE Electron Device Letters·2021· 14 cited
Effects of Dielectric Passivation on Device Performance of AlGaN/GaN High-Electron-Mobility Transistors
ECS Journal of Solid State Science and Technology·2021· 3 cited
Transient Measurement of GaN HEMT Drift Region Potential in the High Power State
IEEE Electron Device Letters·2021· 8 cited
Effects of SiO <sub>2</sub> passivation on the sheet carrier density of two-dimensional electron gas formed in the AlGaN/GaN interface
Japanese Journal of Applied Physics·2020· 2 cited
Cutaneous Sinus Tract of Dental Origin in a Dog
한국임상수의학회 학술대회논문집·2015
Doxycycline and Niacinamide for Treatment of Sterile Panniculitis in Two Dogs
한국임상수의학회 학술대회논문집·2014
Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT
2013· 11 cited
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
IEEE Electron Device Letters·2013· 112 cited
High threshold voltage p-GaN gate power devices on 200 mm Si
2013· 19 cited
Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage
IEEE Electron Device Letters·2013· 52 cited
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters·2013· 272 cited
Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT
2012· 21 cited
1.6kV, 2.9 m&amp;#x2126; cm&lt;sup&gt;2&lt;/sup&gt; normally-off p-GaN HEMT device
2012· 37 cited
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Frequent Co-authors

Jongseob Kim(16), Injun Hwang(13), Sun-Kyu Hwang(10), U‐In Chung(8), Jaikwang Shin(7), Joonyong Kim(7), Hyoji Choi(6), Jong‐Bong Ha(6), Boram Kim(6), Hyuk Choi(5), Jong-Bong Park(5), Soogine Chong(5), Jai Kwang Shin(5), Jun Hyuk Park(5), Woochul Jeon(5), Kinam Kim(4), J.H. Park(3), Dong‐Chul Shin(3), Younghwan Park(3), Youn Seon Hwang(3)