Jai Kwang Shin

Samsung (South Korea) — South Korea

Engineering · Physical Sciences

14h-index1.2kcitations25works0.02yr avg
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Research Topics

Semiconductor materials and devices(9), GaN-based semiconductor devices and materials(5), Silicon Carbide Semiconductor Technologies(4), Graphene research and applications(3), Plasma Diagnostics and Applications(3)

Publications25 total

Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement
IEEE Electron Device Letters·2021· 14 cited
Transient Measurement of GaN HEMT Drift Region Potential in the High Power State
IEEE Electron Device Letters·2021· 8 cited
Time‐Resolved Electroluminescence Study for the Effect of Charge Traps on the Luminescence Properties of Organic Light‐Emitting Diodes
physica status solidi (a)·2020· 34 cited
Origins of High Performance and Degradation in the Mixed Perovskite Solar Cells
Advanced Materials·2019· 66 citedOpen Access
Spontaneous pseudo-topological silicon quantization for redesigned Si-based Li-ion batteries
Nano Energy·2018· 25 cited
Time-asymmetric loop around an exceptional point over the full optical communications band
Nature·2018· 231 cited
Microstructural Analysis of Si Frameworks Induced by Electrochemical (De)Alloying Process
Microscopy and Microanalysis·2018Open Access
Understanding the structural, electrical, and optical properties of monolayer h-phase RuO2 nanosheets: a combined experimental and computational study
NPG Asia Materials·2018· 62 citedOpen Access
Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature
Scientific Reports·2017· 20 citedOpen Access
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
Scientific Reports·2017· 5 citedOpen Access
Deep level trapped defect analysis in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite solar cells by deep level transient spectroscopy
Energy & Environmental Science·2017· 254 citedOpen Access
Effective work function engineering for a TiN/XO(X = La, Zr, Al)/SiO2 stack structures
Applied Physics Letters·2016· 4 cited
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
IEEE Electron Device Letters·2013· 112 cited
High threshold voltage p-GaN gate power devices on 200 mm Si
2013· 19 cited
1.6kV, 2.9 m&amp;#x2126; cm&lt;sup&gt;2&lt;/sup&gt; normally-off p-GaN HEMT device
2012· 37 cited
The structural and electrical evolution of graphene by oxygen plasma-induced disorder
Nanotechnology·2009· 104 cited
Strain-Driven Electronic Band Structure Modulation of Si Nanowires
Nano Letters·2008· 183 cited
Computational Framework for Modeling of Multi-Scale Processes
Journal of Computational and Theoretical Nanoscience·2006· 10 cited
Channel Engineering of Silicon Nanowire Field Effect Transistor: Non-Equilibrium Green's Function Study
2006· 2 cited
Reliability Issues and Models of sub-90nm NAND Flash Memory Cells
2006· 47 cited
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Frequent Co-authors

Jongseob Kim(9), Injun Hwang(5), Sun-Kyu Hwang(5), Jaejoon Oh(5), Dong‐Su Ko(5), Sung Heo(4), Kihong Kim(4), Soogine Chong(4), Soohwan Sul(4), Hyuk Choi(4), Hyo Sug Lee(4), Jong-Bong Park(3), Dong‐Jin Yun(3), Yong Su Kim(3), Ki‐Ha Hong(3), Sung‐Hoon Lee(3), U‐In Chung(3), Changhoon Jung(3), In-Kyeong Yoo(3), Hyung-Ik Lee(3)