John Rozen

IBM (United States) — United States

Engineering · Physical Sciences

26h-index3.5kcitations79works1.52yr avg
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Research Topics

Semiconductor materials and devices(44), Silicon Carbide Semiconductor Technologies(27), Advancements in Semiconductor Devices and Circuit Design(17), Quantum Information and Cryptography(14), Advanced Memory and Neural Computing(14)

Publications79 total

Teleportation and Entanglement Swapping of Continuous Quantum Variables of Microwave Radiation
Physical Review X·2025· 3 citedOpen Access
Teleportation and Entanglement Swapping of Continuous Quantum Variables of Microwave Radiation
arXiv (Cornell University)·2025Open Access
Neural Network Training With Asymmetric Crosspoint Elements
Frontiers in Artificial Intelligence·2022· 24 citedOpen Access
Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)·2022· 5 cited
Neural Network Training with Asymmetric Crosspoint Elements
arXiv (Cornell University)·2022Open Access
Opportunities of in situ TEM for measuring voltage-driven microstructural changes in memristive devices
Microscopy and Microanalysis·2021Open Access
Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
2021· 12 cited
Fundamentals, impedance, and performance of solid-state Li-metal microbatteries
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2020· 3 cited
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
2019· 92 cited
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
2019· 9 cited
Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays
arXiv (Cornell University)·2019· 12 citedOpen Access
(Plenary) Emerging Memory Materials and Electrochemical Synaptic Devices for Scalable Deep Learning Acceleration
ECS Meeting Abstracts·2019
Silicon Encapsulated All Solid-State Li-ion Microbatteries
ECS Meeting Abstracts·2019· 2 cited
Copper-Based 3-Terminal Synaptic Cell with Multiple Resistance Levels
ECS Meeting Abstracts·2019· 4 cited
Reliability Challenges with Materials for Analog Computing
2019· 20 cited
ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing
2018· 154 cited
In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
Time-resolved Conductance in Electrochemical Systems for Neuromorphic Computing
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018· 12 cited
PBTI in InGaAs MOS capacitors with Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf>/TiN gate stacks: Interface-state generation
2018· 2 cited
Electron mobility in thin In<inf>0.53</inf>Ga<inf>0.47</inf>As channel
2017· 3 cited
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Frequent Co-authors

L. C. Feldman(16), John R. Williams(14), Takashi Ando(11), Vijay Narayanan(11), George Keefe(10), Sarit Dhar(9), Mary Beth Rothwell(7), Matthias Steffen(7), Douglas M. Bishop(7), E. Cartier(7), Chad Rigetti(6), Jay Gambetta(6), Jerry M. Chow(6), Antonio Córcoles(6), M. B. Ketchen(6), Teodor K. Todorov(6), Sokrates T. Pantelides(6), Martin M. Frank(6), Seyoung Kim(5), Tayfun Gokmen(5)