P. Kulkarni

Engineering · Physical Sciences

12h-index594citations31works0.82yr avg
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Research Topics

Semiconductor materials and devices(22), Advancements in Semiconductor Devices and Circuit Design(20), Ferroelectric and Negative Capacitance Devices(6), Integrated Circuits and Semiconductor Failure Analysis(6), Silicon Carbide Semiconductor Technologies(4)

Publications31 total

Multi-Crit: Benchmarking Multimodal Judges on Pluralistic Criteria-Following
arXiv (Cornell University)·2025Open Access
KaamSathi: A Dual-Role Service Platform for Part-Time Workers and Students
INTERANTIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT·2025Open Access
Electrochemical Sensing of an Anticancer Drug Temozolamide Using Carbon Paste Electrode Enriched with Porous Carbon Nanotubes and Highly Conductive Titanium Carbide
SSRN Electronic Journal·2025Open Access
Intelligent Control of Power Converters using Reinforcement Learning
2024· 3 cited
Fault Identification in DC-DC Converters Using Support Vector Machines with Power Spectrum-Based Features
2021· 3 cited
UTBB FDSOI transistors with dual STI for a multi-V<inf>t</inf> strategy at 20nm node and below
2012· 53 cited
Ground plane optimization for 20nm FDSOI transistors with thin Buried Oxide
2012· 3 cited
Extremely thin SOI for system-on-chip applications
2012· 5 cited
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
2012· 36 cited
Assessment of fully-depleted planar CMOS for low power complex circuit operation
2011· 6 cited
Implant approaches and challenges for 20nm node and beyond ETSOI devices
2011· 7 cited
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
2011· 7 cited
Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications
2011· 2 cited
Critical analysis of 14nm device options
2011· 11 cited
Impact of substrate bias on GIDL for thin-BOX ETSOI devices
2011· 2 cited
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm 2 SRAM cell
2011· 19 cited
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
Symposium on VLSI Technology·2011· 34 cited
Impact of back bias on ultra-thin body and BOX (UTBB) devices
2011· 45 cited
Extremely thin SOI (ETSOI) technology: Past, present, and future
2010· 19 cited
Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities
2010
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Frequent Co-authors

B. Doris(17), A. Khakifirooz(16), J. Kuss(14), S. Kanakasabapathy(13), S. Ponoth(12), S. Schmitz(12), A. Reznicek(11), L. F. Edge(10), Steven J. Holmes(10), A. Upham(10), T. M. Levin(10), Kangguo Cheng(9), H. Bu(9), N. Loubet(8), J. O'Neill(8), S. Mehta(8), S. Luning(8), Ze‐Lin Zhu(7), J. Cai(7), Rob Johnson(7)