Hideyuki Sugiyama

Physics and Astronomy · Physical Sciences

10h-index297citations37works2.02yr avg
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Research Topics

Magnetic properties of thin films(14), Quantum and electron transport phenomena(11), Semiconductor materials and devices(11), Advancements in Semiconductor Devices and Circuit Design(7), Physics of Superconductivity and Magnetism(6)

Publications37 total

Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM
2024· 2 cited
14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM
2023· 6 cited
Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
Journal of Magnetism and Magnetic Materials·2019· 6 cited
(Invited) High Write Efficiency in Voltage-Control Spintronics Memory (VoCSM) for Saving Energy Consumption of Nonvolatile Memories
ECS Meeting Abstracts·2018
High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows
2018· 3 cited
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system
Applied Physics Express·2018· 36 cited
Enhancement of spin signals through Si crystal orientation in Si-based devices
The Japan Society of Applied Physics·2017
High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)
2017· 17 cited
Room temperature observation of high spin polarization in post annealed Co<sub>2</sub>FeSi/MgO/n<sup>+</sup>-Si on insulator devices
Japanese Journal of Applied Physics·2017· 12 cited
Voltage-Control Spintronics Memory (VoCSM)
The Japan Society of Applied Physics·2017
Large Spin Polarization in Si and the Spin Diffusion term observed in Co 2 FeSi/MgO/ n + -Si on Insulator devices
The Japan Society of Applied Physics·2017
Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/<i>n</i>+-Si on insulator devices
AIP Advances·2016· 6 citedOpen Access
Spin-dependent transport mechanisms in CoFe/MgO/n<sup>+</sup>-Si junctions investigated by frequency response of signals
Applied Physics Express·2016· 2 cited
Effect of post annealing on spin accumulation and transport signals in Co 2 FeSi/MgO/ n + -Si on insulator devices
The Japan Society of Applied Physics·2016
Spin transport and accumulation in <i>n</i>+-Si using Heusler compound Co2FeSi/MgO tunnel contacts
Applied Physics Letters·2015· 22 cited
Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n+-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy
Applied Physics Letters·2014· 10 cited
Spin Injection and Detection into Si through Highly Textured MgO Tunnel Barrier
The Japan Society of Applied Physics·2013
Effects of Interface Resistance Asymmetry on Local and Non-local Magnetoresistance Structures
Japanese Journal of Applied Physics·2013· 7 citedOpen Access
Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices
IEEE Transactions on Magnetics·2012· 23 cited
Spin injection and detection between CoFe/AlO<i>x</i> junctions and SOI investigated by Hanle effect measurements
Journal of Applied Physics·2012· 13 cited
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Frequent Co-authors

M. Ishikawa(22), T. Inokuchi(22), Y. Saito(20), Ajay Tiwari(8), Soichi Oikawa(7), Tetsufumi Tanamoto(7), H. Yoda(6), K. Koi(6), Naoharu Shimomura(6), Mariko Shimizu(6), S. Shirotori(6), B. Altansargai(6), A. Kurobe(6), Takao Marukame(6), Yushi Kato(5), Nobuki Tezuka(5), Y. Ohsawa(4), Kazutaka Ikegami(4), H. Wakana(4), Seiji Adachi(4)