Shiping Guo

Xidian University — China

Physics and Astronomy · Physical Sciences

18h-index1.7kcitations62works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(39), Semiconductor Quantum Structures and Devices(23), Ga2O3 and related materials(17), Quantum Dots Synthesis And Properties(12), Semiconductor materials and devices(12)

Publications62 total

Deep Learning Assisted Inverse Design of Parameters for Liquid Crystal Reconfigurable Coded Metasurface Units
2025
Design of a Miniaturized Dual-Band Differential Filter and Diplexer with Folded Structure and High CM Suppression
2025
Online monitoring of a high-power CW laser optical mirror based on infrared and visible image features visualization
Applied Optics·2025
4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates
Japanese Journal of Applied Physics·2024
Millimeter-Wave Multi-Beam Antenna Based on Filtering Magnetoelectric Dipole
2024
Design of Miniaturized Low-Loss Suspended Stripline Diplexer
2024
Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped <i>p</i>-electrode by microscopic emission investigation
Semiconductor Science and Technology·2023· 3 citedOpen Access
55.5: AMEC MOCVD Solution of Mini/Micro‐LEDs for Advanced Display Applications
SID Symposium Digest of Technical Papers·2021
Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters
ACS Applied Nano Materials·2020· 10 cited
Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains
Photonics Research·2020· 3 cited
Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments
IEEE photonics journal·2019· 9 citedOpen Access
Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
Optics Express·2019· 13 citedOpen Access
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
Superlattices and Microstructures·2019· 17 cited
Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence
Advanced Functional Materials·2018· 57 cited
Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures
Journal of Physics D Applied Physics·2018· 8 cited
II-VI Materials for Visible Light Emitters
2018· 1 cited
Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2018· 5 cited
Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure
IEEE Transactions on Electron Devices·2017· 16 cited
Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics·2013· 89 cited
Gate-recessed integrated E/D GaN HEMT technology with f<sub>T</sub>/f<sub>max</sub> &gt;300 GHz
IEEE Electron Device Letters·2013· 106 cited
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Frequent Co-authors

Xiang Gao(17), M. C. Tamargo(11), Patrick Fay(10), P. Saunier(9), Wei Guo(9), Huili Grace Xing(8), Ronghua Wang(7), Gregory L. Snider(7), W. Lin(7), Moheb Sheikhi(7), Jichun Ye(7), O. Maksimov(7), Guowang Li(6), Igor L. Kuskovsky(6), G. F. Neumark(6), Debdeep Jena(5), Jie’an Jiang(5), Houqiang Xu(5), Jason Hoo(5), Jia Guo(4)