Kok‐Keong Lew

Applied Materials (United States) — United States

Engineering · Physical Sciences

16h-index1.4kcitations32works0.02yr avg
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Research Topics

Nanowire Synthesis and Applications(24), Semiconductor materials and devices(15), Advancements in Semiconductor Devices and Circuit Design(11), Anodic Oxide Films and Nanostructures(7), Semiconductor materials and interfaces(6)

Publications32 total

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices
IEEE Transactions on Electron Devices·2011· 18 cited
Correlation of Substrate Quality and Epitaxial Layer Lifetime and Defectivity in 4H-SiC Homoepitaxy
ECS Meeting Abstracts·2009Open Access
In Situ Axially Doped <i>n</i>-Channel Silicon Nanowire Field-Effect Transistors
Nano Letters·2008· 36 cited
4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm
IEEE Transactions on Electron Devices·2008· 34 cited
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
Journal of Electronic Materials·2008· 20 cited
Oxidation of silicon nanowires for top-gated field effect transistors
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2008· 32 cited
Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor–Liquid–Solid Si/Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> Heterostructure Nanowires
Nano Letters·2008· 157 cited
Raman Scattering from Si<sub>1-</sub><i><sub>x</sub></i>Ge<i><sub>x</sub></i> Alloy Nanowires
The Journal of Physical Chemistry C·2008· 23 cited
Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth
2007
Etch rates for Si-face 4H-SiC using H<sub>2</sub> and a C<sub>3</sub>H<sub>8</sub> partial pressure
2007
H<sub>2</sub> etching and epitaxial growth on 4H-SiC boule domes
2007
Diameter-Dependent Composition of Vapor−Liquid−Solid Grown Si<sub>1</sub><sub>-</sub><i><sub>x</sub></i>Ge<i><sub>x</sub></i> Nanowires
Nano Letters·2007· 62 cited
High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 6 cited
Silicon Nanowire Array Photoelectrochemical Cells
Journal of the American Chemical Society·2007· 224 cited
Raman Scattering from Si 1-x Ge x Alloy Nanowires
APS March Meeting Abstracts·2007
Effect of growth conditions on the composition and structure of Si<sub>1−<i>x</i></sub>Ge<i><sub>x</sub></i> nanowires grown by vapor–liquid–solid growth
Journal of materials research/Pratt's guide to venture capital sources·2006· 32 cited
Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices
2006· 5 cited
High-Performance Nanomechanical Oscillators Fabricated by Bottom-up Integration of Silicon Nanowires
2006
High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 3 cited
Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires
Nano Letters·2005· 143 cited
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Frequent Co-authors

Joan M. Redwing(24), Elizabeth C. Dickey(12), Theresa S. Mayer(10), Ling Pan(9), Brenda L. VanMil(7), Rachael L. Myers‐Ward(7), Charles R. Eddy(7), Suzanne E. Mohney(6), D. Kurt Gaskill(6), Sarah M. Eichfeld(4), Pramod Nimmatoori(4), Tsung-Ta Ho(4), Sarah M. Dilts(4), Yan‐Feng Wang(4), Bangzhi Liu(4), Marco A. Cabassi(3), Xi Zhang(3), Yanfeng Wang(2), Steven W. Novak(2), Timothy E. Bogart(2)