Suzanne E. Mohney

Pennsylvania State University — United States

Engineering · Physical Sciences

42h-index6.2kcitations287works2.32yr avg
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Research Topics

Semiconductor materials and devices(118), Semiconductor materials and interfaces(104), GaN-based semiconductor devices and materials(69), Nanowire Synthesis and Applications(43), Metal and Thin Film Mechanics(39)

Publications287 total

GaN Digital IC Operating Up to 800 °C Temperature
IEEE Transactions on Electron Devices·2026
Influence of metal-induced doping on different 2D MoS2 epilayers for field effect transistors
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025
Design and 800 °C operation of an ohmic contact to AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing·2025
(<i>Invited</i>) Contacts to Group III Nitride Semiconductors
ECS Meeting Abstracts·2025
p-GaN Gated HEMT With 770 <i>I</i>ON/<i>I</i>OFF Ratio Operating at 800 °C
IEEE Electron Device Letters·2025· 4 cited
Zr/Al and Zr/Al/Mo/Au Ohmic Contacts to AlN-Rich AlGaN
Journal of Electronic Materials·2025· 1 citedOpen Access
GaN Bootstrapping Amplifier IC Operating at up to 800 °C Temperature
IEEE Electron Device Letters·2025· 5 cited
Molybdenum carbonitride Schottky contacts prepared by thermal atomic layer deposition on gallium nitride
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025
ALD-grown semimetallic TiS <sub> <i>x</i> </sub> for hole injection into monolayer WSe <sub>2</sub>
RSC Advances·2025Open Access
<strong>Influence of Metal-Induced Doping on Different 2D MoS<sub>2</sub> Epilayers </strong><strong>for Field Effect Transistors</strong>
AIP Publishing·2025Open Access
<strong>Influence of Metal-Induced Doping on Different 2D MoS<sub>2</sub> Epilayers </strong><strong>for Field Effect Transistors</strong>
AIP Publishing·2025Open Access
Influence of Metal-Induced Doping on Different 2D MoS2 Epilayers for Field Effect Transistors
AIP Publishing·2025Open Access
Influence of Metal-Induced Doping on Different 2D MoS2 Epilayers for Field Effect Transistors
AIP Publishing·2025Open Access
Effect of physical vapor deposition on contacts to 2D MoS2
Journal of Applied Physics·2024· 7 citedOpen Access
Design of Highly Dispersed Pt Entities on Mesoporous N-Doped Carbon Nanospheres – Improving Pt Utilization for Hydrogen Evolution
ECS Meeting Abstracts·2024
Thin Film Electrocatalysts on Extended Surface Supports for the Oxygen Reduction Reaction
ECS Meeting Abstracts·2024
Correction to “Single-Crystal Intermetallic Catalysts Using MoS<sub>2</sub> as a Growth Template”
Crystal Growth & Design·2024Open Access
Ultrasmall and Highly Dispersed Pt Entities Deposited on Mesoporous N‐doped Carbon Nanospheres by Pulsed CVD for Improved HER
Small·2024· 26 citedOpen Access
Single-Crystal Intermetallic Catalysts Using MoS<sub>2</sub> as a Growth Template
Crystal Growth & Design·2024
Ultrascaled Contacts to Monolayer MoS<sub>2</sub> Field Effect Transistors
Nano Letters·2023· 38 cited
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Frequent Co-authors

Joan M. Redwing(10), Jian Xu(7), B. P. Luther(6), Scott D. Wolter(6), N. S. Dellas(6), Theresa S. Mayer(5), Huaipeng Su(4), Chunfeng Zhang(4), J. M. DeLucca(4), Hari Venugopalan(4), Jingkang Wang(3), Zhan’ao Tan(3), Ting Zhu(3), Jerzy Rużyłło(3), J. Crofton(3), Xiaojun Weng(3), Sarah M. Eichfeld(3), Thomas N. Jackson(2), D. L. Waltemyer(2), R. J. Molnar(2)