J. M. DeLucca

LSI Solutions (United States) — United States

Physics and Astronomy · Physical Sciences

15h-index708citations25works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(11), Semiconductor materials and devices(11), Electronic Packaging and Soldering Technologies(8), Metal and Thin Film Mechanics(5), Semiconductor materials and interfaces(5)

Publications25 total

Corrosion of the Cu/Al interface in Cu-Wire-bonded integrated circuits
2013· 21 cited
Observations of IMC Formation for Au Wire Bonds to Al Pads
Journal of Electronic Materials·2012· 15 cited
ENIG Corrosion Induced by Second-Phase Precipitation
Journal of Electronic Materials·2009· 5 cited
Stability of Flip-Chip Interconnects Assembled with Al/Ni(V)/Cu-UBM and Eutectic Pb-Sn Solder During Exposure to High-Temperature Storage
Journal of Electronic Materials·2008· 13 cited
Study of the interfacial reactions between a bioactive apatite–mullite glass–ceramic coating and titanium substrates using high angle annular dark field transmission electron microscopy
Journal of Materials Science Materials in Medicine·2008· 22 cited
Thermal degradation of sputtered Al/Ni(V)/Cu-UBM in Pb-free flip chip solder joints connected to substrate with different surface finishes
2008· 1 cited
Voiding in Cu Technology through Photovoltaic-Driven Electrochemical Dissolution
Proceedings - International Symposium for Testing and Failure Analysis·2007· 1 cited
Sn-whiskers: truths and myths
2007· 9 cited
Sn Corrosion and Its Influence on Whisker Growth
IEEE Transactions on Electronics Packaging Manufacturing·2007· 77 cited
Sn-whiskers: truths and myths
Journal of Materials Science Materials in Electronics·2006· 54 cited
Microscopy of Materials Used in the Semiconductor Industry
Microscopy and Microanalysis·2005Open Access
Ohmic and Schottky contacts to gallium nitride: The influence of processing on properties
2000
Pt Schottky contacts to <i>n</i>-GaN formed by electrodeposition and physical vapor deposition
Journal of Applied Physics·2000· 26 cited
An investigation into the early stages of oxide growth on gallium nitride
Thin Solid Films·2000· 88 cited
Approaches to designing thermally stable Schottky contacts to n-GaN
Semiconductor Science and Technology·1999· 17 cited
Erratum: “Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN” [Appl. Phys. Lett. <b>73</b>, 3402 (1998)]
Applied Physics Letters·1999Open Access
Wet thermal oxidation of GaN
Journal of Electronic Materials·1999· 66 cited
Ohmic contacts formed by electrodeposition and physical vapor deposition on <i>p</i>-GaN
Applied Physics Letters·1998· 19 cited
Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN
Journal of Electronic Materials·1998· 34 cited
Improved ohmic contact to n-type 4H and 6H-SiC using nichrome
Journal of Electronic Materials·1998· 23 cited
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Frequent Co-authors

Suzanne E. Mohney(13), F. A. Baiocchi(9), John Osenbach(8), Hari Venugopalan(5), B. P. Luther(4), R. F. Karlicek(4), Scott D. Wolter(3), B. D. Potteiger(3), Adibah Amin(3), J. Crofton(2), John R. Williams(2), E. Luckowski(2), R. J. Molnar(2), G. E. Bulman(2), A. Amin(2), M. Bachman(2), D. L. Crouthamel(2), R. Weachock(2), R. S. Kern(1), Chia-Chen Kuo(1)