B. P. Luther

Pennsylvania State University — United States

Physics and Astronomy · Physical Sciences

12h-index1.1kcitations17works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), Semiconductor materials and devices(13), Metal and Thin Film Mechanics(12), Ga2O3 and related materials(3), Plasma Diagnostics and Applications(2)

Publications17 total

TiN and ZrN based ohmic contacts to n-GaN
2002· 10 cited
Environmental aging of Schottky contacts to <i>n</i>-AlGaN
Journal of Applied Physics·2001· 21 cited
High temperature Pt Schottky diode gas sensors on n-type GaN
Sensors and Actuators B Chemical·1999· 190 cited
Titanium and titanium nitride contacts to n-type gallium nitride
Semiconductor Science and Technology·1998· 59 cited
ChemInform Abstract: Phase Equilibria in the Transition Metal‐Ga‐N Systems: Experimental Determinations and Consequences for Electrical Contacts to Gallium Nitride
ChemInform·1998
Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN
Journal of Electronic Materials·1998· 34 cited
Morphology of nickel and nickel/gold contacts to gallium nitride
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1998· 16 cited
Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
Applied Physics Letters·1997· 91 cited
Interfacial reactions between nickel thin films and GaN
Journal of Applied Physics·1997· 75 cited
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
Applied Physics Letters·1997· 240 cited
Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b> <i>n</i> </b>-type GaN
Applied Physics Letters·1997· 256 cited
Growth and Characterization of Thermal Oxides on Gallium Nitride
MRS Proceedings·1997· 7 cited
Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride
MRS Proceedings·1997· 22 cited
Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride
MRS Proceedings·1996· 4 cited
Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2
Applied Physics Letters·1995· 5 cited
Metallurgical Study of Contacts to Gallium Nitride
MRS Proceedings·1995· 15 cited
Nearly isotropic etching of 6H-SiC in NF3 and O2 using a remote plasma
Applied Physics Letters·1993· 24 cited

Frequent Co-authors

Suzanne E. Mohney(15), Scott D. Wolter(6), Thomas N. Jackson(5), Hari Venugopalan(5), J. M. DeLucca(4), M. Asif Khan(3), R. F. Karlicek(3), Jinwei Yang(2), D. L. Waltemyer(2), Joan M. Redwing(2), Jerzy Rużyłło(2), G. E. Bulman(2), Q. Chen(1), C. Önneby(1), R. J. Molnar(1), D. L. Miller(1), Eric D. Readinger(1), E. L. Piner(1), R. S. Kern(1), J. Staffa(1)