E. Luckowski

Engineering · Physical Sciences

12h-index586citations43works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(27), Advancements in Semiconductor Devices and Circuit Design(17), Silicon Carbide Semiconductor Technologies(16), Semiconductor materials and interfaces(9), Integrated Circuits and Semiconductor Failure Analysis(9)

Publications43 total

Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
2008· 16 cited
Highly Manufacturable and Cost-effective Single TaxC / HfxZr(1-x)O2 Gate CMOS Bulk Platform for LP Applications at the 45nm Node and Beyond
2007
Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
2006· 3 cited
Tantalum carbide etch characterization in inductively coupled Ar∕Cl2∕HBr plasmas
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2006· 1 cited
Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance
2006· 17 cited
Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor
2006· 17 cited
Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability
2006· 11 cited
The Influence of Selected Material and Transport Parameters on the Accuracy of Modeling Early Voltage in SiGe-Base HBT
2006
Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability
2006· 2 cited
Industry Trend: Planar Double Gate Technology
2006· 4 cited
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack
2005· 35 cited
Challenges for the integration of metal gate electrodes
2005· 71 cited
Metal Etch Rate Stability in an ICP Chamber
APS·2004
Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors
2004· 10 cited
Contacts and junctions for the 45nm node
2004· 1 cited
Single-layer and bilayer resist processes for EUV-type integrations
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2004· 2 cited
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
2004· 20 cited
Materials Challenges for CMOS Junctions
MRS Proceedings·2004· 5 cited
Investigations of Metal Gate Electrodes on HfO<sub>2</sub> Gate Dielectrics
MRS Proceedings·2004· 5 cited
Oxygen vacancy defects in tantalum pentoxide: a density functional study
Microelectronic Engineering·2003· 15 cited
page 1 of 3Next →

Frequent Co-authors

J. Schaeffer(12), C. Capasso(11), D. C. Gilmer(11), S. Kalpat(11), John R. Williams(10), R. I. Hegde(10), Dina H. Triyoso(10), P.J. Tobin(9), Tamara Isaacs‐Smith(9), J. Crofton(7), S. Samavedam(7), H.‐H. Tseng(7), William J. Taylor(7), B. E. White(7), L.B. La(7), Jeff B. Casady(6), O. Adetutu(6), M. Raymond(6), Karen Moore(5), D. Roan(5)