Dina H. Triyoso

In-Q-Tel — United States

Engineering · Physical Sciences

30h-index3.0kcitations152works2.02yr avg
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Research Topics

Semiconductor materials and devices(118), Advancements in Semiconductor Devices and Circuit Design(65), Ferroelectric and Negative Capacitance Devices(64), Integrated Circuits and Semiconductor Failure Analysis(37), Electronic and Structural Properties of Oxides(32)

Publications152 total

Time-Dependent Quantized Conductance Degradation in High-K Switching Devices Treated with H-Plasma
ECS Meeting Abstracts·2025
Teaching an Old Dog Some New Tricks, and Other Sustainability Stories: Perspectives of an IEEE Fellow with two decades of industrial experience
IEEE Electron Devices Magazine·2025
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
ArXiv.org·2025Open Access
A Comparative Study of H-Plasma Treated ZrO<sub>2</sub> and HfO<sub>2</sub> RRAM Devices for Low Power in-Memory Computing
ECS Meeting Abstracts·2025
Process Optimization for Low Power HfO<sub>2</sub>-Based Resistive Switching Devices for In-Memory Computing Application
ECS Journal of Solid State Science and Technology·2025· 1 citedOpen Access
Template Matching Approach for Automated Determination of Crystal Phase and Orientation of Grains in 4D-STEM Precession Electron Diffraction Data for Hafnium Zirconium Oxide Ferroelectric Thin Films
Microscopy and Microanalysis·2025· 12 citedOpen Access
(Invited) Investigation of Plasma Defect Engineering in ZrO<sub>2</sub>-Based RRAM Devices for Low Power in-Memory Computing
ECS Meeting Abstracts·2024
Engineering of ZrO2-based RRAM devices for low power in-memory computing
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2024· 1 cited
Engineering High-K Switching Devices for in-Memory Computing
ECS Meeting Abstracts·2024
High-Performance HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform
IEEE Transactions on Electron Devices·2024· 6 cited
Impact of Bottom Electrode in HfO<sub>2</sub>-Based Rram Devices on Switching Characteristics
ECS Meeting Abstracts·2023
Process Optimization to Reduce Power in HfO<sub>2</sub>-Based Rram Devices for in-Memory Computing
ECS Meeting Abstracts·2022· 2 cited
Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO<sub>2</sub>
ACS Applied Materials & Interfaces·2022· 22 cited
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Nature Communications·2022· 59 citedOpen Access
Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study
IEEE Transactions on Electron Devices·2022· 10 cited
Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 27 cited
(Invited) Teaching an Old Dog (ALD HfO<sub>2</sub>) Some New Tricks
ECS Meeting Abstracts·2021
RRAM Devices with Plasma Treated HfO<sub>2</sub> with Ru as Top Electrode for In-Memory Computing Hardware
ECS Meeting Abstracts·2021
RRAM Devices with Plasma Treated HfO<sub>2</sub> with Ru as Top Electrode for In-Memory Computing Hardware
ECS Transactions·2021· 5 cited
(Invited) Teaching an Old Dog (ALD HfO<sub>2</sub>) Some New Tricks
ECS Transactions·2021
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Frequent Co-authors

R. I. Hegde(21), Philip J. Tobin(17), B. E. White(16), D. Roan(15), S. Samavedam(13), D. C. Gilmer(13), J. Schaeffer(11), R. Rai(10), H.‐H. Tseng(10), R. Gregory(10), R. Garcia(8), V. Dhandapani(7), J. M. Grant(6), L.B. La(6), S. Kalpat(6), Steven Consiglio(6), Kandabara Tapily(6), Robert D. Clark(6), L. R. C. Fonseca(5), E.A. Hebert(5)