L.B. La

University of Georgia — United States

Engineering · Physical Sciences

11h-index592citations21works1.02yr avg
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Research Topics

Semiconductor materials and devices(17), Advancements in Semiconductor Devices and Circuit Design(13), Integrated Circuits and Semiconductor Failure Analysis(9), Ferroelectric and Negative Capacitance Devices(8), Electronic and Structural Properties of Oxides(4)

Publications21 total

Genome analysis uncovers an inverse correlation between alterations in <scp>P21</scp>‐activated kinases and patient survival across multiple cancer types
Physiological Reports·2025· 1 citedOpen Access
Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
2006· 3 cited
Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability
2006· 11 cited
Strain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super-Critically Thick Strained Silicon Directly on Insulator (SC-SSOI)
2006· 13 cited
Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability
2006· 2 cited
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2004· 69 cited
Contacts and junctions for the 45nm node
2004· 1 cited
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
2004· 20 cited
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
Journal of The Electrochemical Society·2004· 165 cited
Dual-metal gate CMOS with HfO/sub 2/ gate dielectric
2003· 37 cited
Metal gate MOSFETs with HfO/sub 2/ gate dielectric
2003· 9 cited
Compatibility of silicon gates with hafnium-based gate dielectrics
Microelectronic Engineering·2003· 24 cited
Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation
2003· 4 cited
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2002· 100 cited
PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology
2002· 26 cited
Copper integration into 0.5 μm BiCMOS technology
2002
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
Applied Physics Letters·2002· 79 cited
Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO<sub>2</sub> Gate Dielectric
MRS Proceedings·2002· 6 cited
Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2000· 18 cited
Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation
MRS Proceedings·1999· 1 cited
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Frequent Co-authors

R. I. Hegde(13), D. C. Gilmer(12), Philip J. Tobin(11), Dina H. Triyoso(9), D. Roan(9), S. Samavedam(9), J. Schaeffer(8), V. Dhandapani(8), B. E. White(7), E. Luckowski(7), R. Garcia(6), J. Mogab(6), H.‐H. Tseng(6), P.J. Tobin(6), R. Gregory(5), C. Hobbs(5), Bich-Yen Nguyen(5), James A. Smith(5), R. Rai(5), Chris Hobbs(5)