D. C. Gilmer

Société Française de Cardiologie — France

Engineering · Physical Sciences

38h-index6.0kcitations153works0.02yr avg
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Research Topics

Semiconductor materials and devices(113), Ferroelectric and Negative Capacitance Devices(67), Advanced Memory and Neural Computing(55), Advancements in Semiconductor Devices and Circuit Design(50), Integrated Circuits and Semiconductor Failure Analysis(27)

Publications153 total

Commercialization in Europe of a new bacteriophage-based food additive within the ‘One Health’ context: what do regulatory authorities say?
Virologie·2025
The French “Phage therapy” transdisciplinary group is born!
Virologie·2023
Thank you authors, reviewers and editors
Virologie·2023
Engineering Nanomaterials and Nanostructures for Electronic Applications: A Case Study of Carbon Nanotubes for Memory Devices
2020· 6 cited
Memory update characteristics of carbon nanotube memristors (NRAM<sup>®</sup>) under circuitry-relevant operation conditions
2020· 1 cited
Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications
Elsevier eBooks·2019· 28 cited
NRAM: a disruptive carbon-nanotube resistance-change memory
Nanotechnology·2018· 11 cited
Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)
Nanostructure science and technology·2018· 10 cited
NRAM status and prospects
2017· 4 cited
Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy
Resource-Efficient Technologies·2015· 9 citedOpen Access
Book review
Resource-Efficient Technologies·2015Open Access
Conductive filament structure in HfO2 resistive switching memory devices
Solid-State Electronics·2015· 54 cited
Switching characteristics of W/Zr/HfO<sub>2</sub>/TiN ReRAM devices for multi-level cell non-volatile memory applications
Semiconductor Science and Technology·2015· 44 cited
Magnetron sputtering for the production of EUV mask blanks
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 1 cited
Evaluation of variability and RTN in scaled RRAM
2014· 3 cited
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014· 1 cited
Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches
IEEE Transactions on Electron Devices·2014· 144 citedOpen Access
L<sub>g</sub> = 100 nm In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
Applied Physics Letters·2014· 7 cited
(Invited) Passivation Schemes for Ge High-K Metal Gate MOSFETs on Si for VLSI Production
ECS Meeting Abstracts·2014
Mechanistic understanding of mobility degradation on gate-last ZrO&lt;inf&gt;2&lt;/inf&gt; with medium thermal budget annealing
2014
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Frequent Co-authors

G. Bersuker(17), P. D. Kirsch(13), R. I. Hegde(10), S. Samavedam(9), Dina H. Triyoso(9), H.‐H. Tseng(8), B. E. White(8), Philip J. Tobin(8), B. Butcher(8), Andrea Padovani(7), Luca Larcher(7), Wayne L. Gladfelter(7), J. Schaeffer(7), Simone Balatti(6), Daniele Ielmini(6), Dmitry Veksler(6), Stephen A. Campbell(6), V. Dhandapani(6), D. Roan(6), R. Jammy(6)