S. Samavedam

Engineering · Physical Sciences

24h-index2.1kcitations56works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(53), Advancements in Semiconductor Devices and Circuit Design(45), Ferroelectric and Negative Capacitance Devices(19), Integrated Circuits and Semiconductor Failure Analysis(17), Electronic and Structural Properties of Oxides(6)

Publications56 total

MT37 Utilization of Digital Health Applications (DiGAs) in Cancer Treatment in Germany
Value in Health·2024
MT59 Overview of Approved Digital Therapeutics in Belgium
Value in Health·2023Open Access
Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation
2018· 8 cited
Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies
2018· 10 cited
14-nm FinFET Technology for Analog and RF Applications
IEEE Transactions on Electron Devices·2017· 105 cited
14nm FinFET technology for analog and RF applications
2017· 51 cited
Modeling the impact of the vertical doping profile on FinFET SRAM V<inf>T</inf> mismatch
2016
Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling
2016· 3 cited
Estimation of porosity and shrinkage in a cast eutectic Al–Si alloy
Canadian Metallurgical Quarterly·2013· 5 cited
High performance bulk planar 20nm CMOS technology for low power mobile applications
2012· 26 cited
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
2011· 81 cited
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
2011· 7 cited
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
2010· 4 cited
Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- $k$ Dielectrics
IEEE Transactions on Electron Devices·2010· 24 cited
Modeling and Analysis of Parasitic Resistance in Double-Gate FinFETs
IEEE Transactions on Electron Devices·2009· 39 cited
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
2009
32nm general purpose bulk CMOS technology for high performance applications at low voltage
2008· 56 cited
Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate
Thin Solid Films·2008· 9 cited
Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes
ECS Transactions·2008· 2 cited
Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes
ECS Meeting Abstracts·2008Open Access
page 1 of 3Next →

Frequent Co-authors

D. C. Gilmer(24), Dina H. Triyoso(22), J. Schaeffer(20), R. I. Hegde(18), D. Roan(16), Philip J. Tobin(15), B. E. White(14), C. Capasso(12), V. Dhandapani(11), R. Rai(10), H.‐H. Tseng(10), S. Kalpat(9), L.B. La(9), R. Gregory(9), William J. Taylor(9), J. M. Grant(8), R. Garcia(8), Chris Hobbs(8), J. Mogab(8), L. R. C. Fonseca(7)