J. Limb

Intel (United States) — United States

Physics and Astronomy · Physical Sciences

16h-index681citations24works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(23), Semiconductor materials and devices(8), Semiconductor Quantum Structures and Devices(7), Ga2O3 and related materials(7), Silicon Carbide Semiconductor Technologies(6)

Publications24 total

A 22nm high performance embedded DRAM SoC technology featuring tri-gate transistors and MIMCAP COB
2013· 17 cited
GaN ultraviolet avalanche photodiodes fabricated on free‐standing bulk GaN substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 11 cited
III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
Applied Physics Letters·2008· 30 cited
Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
Applied Physics Letters·2008· 67 cited
GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation
Electronics Letters·2008· 10 cited
Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates
Applied Physics Letters·2008· 30 cited
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers
Journal of Electronic Materials·2007· 12 cited
High-performance GaN and Al x Ga 1-x N ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 8 cited
Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes
Applied Physics Letters·2007· 29 cited
Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes
Journal of Electronic Materials·2007· 19 cited
Low on-resistance GaN <i>pin</i> rectifiers grown on 6H-SiC substrates
Electronics Letters·2007· 16 cited
Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors
Applied Physics Letters·2007· 39 cited
High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition
Journal of Crystal Growth·2006· 8 cited
High performance GaN <i>pin</i> rectifiers grown on free-standing GaN substrates
Electronics Letters·2006· 43 cited
Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors
Applied Physics Letters·2006· 22 cited
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
Applied Physics Letters·2006· 108 cited
High current gain InGaN/GaN HBTs with 300°C operating temperature
Electronics Letters·2006· 18 cited
High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature
Electronics Letters·2006· 5 cited
GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates
Applied Physics Letters·2006· 24 cited
Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design
Applied Physics Letters·2006· 8 cited
page 1 of 2Next →

Frequent Co-authors

Dongwon Yoo(20), Jae‐Hyun Ryou(20), Russell D. Dupuis(20), Shyh‐Chiang Shen(12), W. Lee(7), T. Chung(5), D.M. Keogh(5), P.M. Asbeck(5), Edward A. Preble(4), K. R. Evans(4), L. McCarthy(3), Huili Grace Xing(3), Steven P. DenBaars(3), Umesh K. Mishra(3), Zhihao Wu(3), Alec M. Fischer(3), F. A. Ponce(3), C. A. Horne(3), Drew Hanser(2), Nicole Williams(2)