C.A.C. Mendonça

AT&T (United States) — United States

Physics and Astronomy · Physical Sciences

10h-index246citations37works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(25), Quantum and electron transport phenomena(8), Semiconductor materials and devices(7), Semiconductor materials and interfaces(6), Semiconductor Lasers and Optical Devices(5)

Publications37 total

Monolithic polarization-insensitive passively mode-locked fiber laser
2005· 2 cited
Effect of kinetics on the nucleation of thin InAs films on InP by chemical beam epitaxy
2002
High quality InGaAsP/InP multiple quantum well modulator structures for 1.3 and 1.5 μm applications
2002
Light scattering and atomic force microscopy study of InAs island formation on InP
Journal of Applied Physics·2000· 14 citedOpen Access
Surface morphologies in GaAs homoepitaxy: Mound formation and evolution
Physical review. B, Condensed matter·1998· 23 citedOpen Access
Equilibrium shape and nucleation on InP(001) surfaces: effect of surface steps
Journal of Crystal Growth·1998· 3 cited
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
Physical review. B, Condensed matter·1998· 9 citedOpen Access
On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands
Applied Physics Letters·1998· 12 cited
Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles
Journal of Crystal Growth·1998· 4 cited
On the onset of InAs islanding on InP: influence of surface steps
Surface Science·1997· 13 cited
Broadband Tuning of a Femtosecond Neodymium Fiber Laser
Advanced Solid-State Lasers·1996
Capacitance–voltage and current–voltage characterization of Al<i>x</i>Ga1−<i>x</i>As–GaAs structures
Journal of Applied Physics·1995· 3 cited
Widely tunable femtosecond neodymium fiber laser
Optics Letters·1995· 6 cited
High-power neodymium soliton fiber laser that uses a chirped fiber grating
Optics Letters·1995· 18 cited
Effects of cation diffusion during chemical beam etching
Journal of Crystal Growth·1995· 3 cited
Surface cleaning of GaAs by <i>in</i> <i>situ</i> chemical beam etching
Applied Physics Letters·1994· 12 cited
Impurity removal by chemical beam etching of GaAs
Electronics Letters·1994· 4 cited
Evidence of a two-dimensional to three-dimensional transition in Si δ-doped GaAs structures
Physical review. B, Condensed matter·1993· 14 citedOpen Access
Electronic States of n-Type δ-Doping in GaAs Heterostructures
Materials science forum·1993· 7 cited
Estudo de propriedades ópticas e de transporte em estruturas semicondutoras com dopagem planar
1993
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Frequent Co-authors

L. M. R. Scolfaro(12), E.A. Menêses(12), T. H. Chiu(8), M. A. Cotta(7), M.M.G. de Carvalho(7), J. R. Leite(6), F. Plentz(6), M. Micovic(5), J. R. Leite(5), G. Sucha(4), M. H. Ober(4), R. Hofer(4), S. M. Shibli̇(3), D. Harter(3), P. Ciepielewski(3), José Brás Barreto de Oliveira(3), M. D. Williams(3), F. G. Storz(3), Jaqueline Martins(3), M. E. Fermann(3)