M.M.G. de Carvalho

Institute of Chemical Technology — India

Physics and Astronomy · Physical Sciences

10h-index334citations62works0.72yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(36), Semiconductor materials and devices(11), Photonic and Optical Devices(10), Semiconductor Lasers and Optical Devices(9), Advanced Semiconductor Detectors and Materials(9)

Publications62 total

Ultrasensitive impedimetric detection of Succinate- A biomarker for Chronic kidney disease on Picomolar level using boron doped carbon nitride nanosheet
Microchemical Journal·2025· 2 cited
Graphene-Based PAM-4 Optical Modulator on Side-Polished Fiber
2024
Ultrasensitive Impedimetric Detection of Succinate- a Biomarker for Chronic Kidney Disease on Picomolar Level Using Boron Doped Carbon Nitride Nanosheet
SSRN Electronic Journal·2024Open Access
Adaptive PAM-4 /PAM-8 Graphene-based Electro-Optical Modulator
Latin America Optics and Photonics (LAOP) Conference 2022·2022
A novel protection mechanism in TDM-PON
2009· 11 cited
Heterostructure interface roughness characterization by chemical mapping: Application to InGaP/GaAs quantum wells
Journal of Applied Physics·2008· 1 citedOpen Access
DIFRAÇÃO MÚLTIPLA DE RAIOS-X NA OBSERVAÇÃO DO ORDENAMENTO NA ESTRUTURA InGaP/GaAs(001)
Revista Brasileira de Aplicações de Vácuo·2008Open Access
Evidence of formation of Si–C bonds during growth of Si-doped III–V semiconductor compounds
Applied Physics Letters·2005· 1 citedOpen Access
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
Brazilian Journal of Physics·2004· 4 citedOpen Access
Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy
Journal of Crystal Growth·2004
Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
Surface Science·2003· 7 cited
Spatial ordering in InP/InGaP nanostructures
Applied Physics Letters·2003· 18 citedOpen Access
Vertical stacks of InAs quantum wires in an InP matrix
Journal of Crystal Growth·2003· 7 cited
Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy
Thin Solid Films·2003· 2 cited
InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance plasma
2003· 1 cited
Field effect transistor with 170 nm gate fabricated by atomic force lithography
2003· 1 cited
InP synthesis by the synthesis, solute diffusion (SSD) method using glassy-carbon crucibles
2002· 2 cited
Effect of kinetics on the nucleation of thin InAs films on InP by chemical beam epitaxy
2002
Role of group V exchange on the shape and size of InAs/InP self-assembled nanostructures
Journal of Applied Physics·2002· 46 citedOpen Access
Electrical isolation of InGaP by proton and helium ion irradiation
Journal of Applied Physics·2002· 11 citedOpen Access
page 1 of 4Next →

Frequent Co-authors

M. A. Cotta(25), Jefferson Bettini(12), Humberto R. Gutiérrez(7), C.A.C. Mendonça(7), C.E.M. de Oliveira(6), M. A. A. Pudenzi(6), E.A. Menêses(5), José Roberto Ribeiro Bortoleto(4), Lisandro Pavie Cardoso(4), Newton C. Frateschi(4), C. R. Miskys(4), K. M. I.-Landers(3), Sérgio L. Morelhão(3), Édson Laureto(3), D. Ugarte(3), Richard Landers(3), V. R. Coluci(2), L. P. Cardoso(2), Carlos Barreto(2), Christina F. de Souza(2)