C. R. Miskys

Schott (Germany) — Germany

Physics and Astronomy · Physical Sciences

15h-index1.8kcitations38works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Ga2O3 and related materials(15), Semiconductor Quantum Structures and Devices(11), ZnO doping and properties(11), Metal and Thin Film Mechanics(9)

Publications38 total

Inversion domain boundaries in GaN studied by X‐ray microprobe
physica status solidi (RRL) - Rapid Research Letters·2010Open Access
Scanning x-ray excited optical luminescence microscopy in GaN
Applied Physics Letters·2006· 50 citedOpen Access
Structural and interface properties of an AlN diamond ultraviolet light emitting diode
Applied Physics Letters·2004· 14 cited
High quality heteroepitaxial AlN films on diamond
Journal of Applied Physics·2004· 38 cited
Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures
Japanese Journal of Applied Physics·2004· 14 cited
Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
Japanese Journal of Applied Physics·2004· 50 cited
New Substrates for Epitaxy of Group III Nitride Semiconductors
mediaTUM – the media and publications repository of the Technical University Munich (Technical University Munich)·2004Open Access
Free‐standing HVPE‐GaN Layers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 2 cited
AlN/Diamond np-junctions
Diamond and Related Materials·2003· 26 cited
Freestanding GaN‐substrates and devices
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 69 cited
Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
Journal of Crystal Growth·2003· 15 cited
AlN/diamond heterojunction diodes
Applied Physics Letters·2003· 100 cited
InP synthesis by the synthesis, solute diffusion (SSD) method using glassy-carbon crucibles
2002· 2 cited
Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2002· 1 cited
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
Journal of Physics Condensed Matter·2002· 1.0k cited
Photoluminescence study of excitons in homoepitaxial GaN
Journal of Applied Physics·2001· 44 citedOpen Access
Excitonic Transitions in Homoepitaxial GaN
physica status solidi (b)·2001· 1 cited
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
Journal of Applied Physics·2001· 21 citedOpen Access
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
Applied Physics Letters·2001· 62 citedOpen Access
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Materials Science and Engineering B·2001· 6 cited
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Frequent Co-authors

M. Stutzmann(25), O. Ambacher(24), Gema Martínez‐Criado(9), Martin Eickhoff(5), R. Dimitrov(5), A. Cros(5), A. Cantarero(5), José A. Garrido(4), Christoph E. Nebel(4), Martin Hermann(4), Frank Stowasser(4), Michael Giersig(4), Alisson Padilha de Lima(4), U. Karrer(4), C.E.M. de Oliveira(4), M.M.G. de Carvalho(4), V. Tilak(3), L.F. Eastman(3), H. Sussek(3), Hans Pritzkow(3)