R. Dimitrov

Bahçeşehir University — Turkey

Physics and Astronomy · Physical Sciences

27h-index8.2kcitations60works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(50), Ga2O3 and related materials(28), ZnO doping and properties(18), Semiconductor materials and devices(14), Metal and Thin Film Mechanics(13)

Publications60 total

A semi-analytical solution of a system of dipoles placed along a ring tending to an exact solution at low temperatures
The European Physical Journal Plus·2022
Formation of couples of topological defects in one-dimensional magnetic dipole systems
The European Physical Journal Plus·2022
Order–disorder transition in a linear system of anti-parallel magnetic dipoles with long-range interactions
Physica A Statistical Mechanics and its Applications·2021· 2 cited
The ground states of nanomagnetic dipoles placed on an infinite square lattice
Journal of Magnetism and Magnetic Materials·2019· 3 cited
Magnetic flux distribution in a locally magnetized ferromagnetic object
Russian Journal of Nondestructive Testing·2016· 3 cited
Magnetic technique for detecting discontinuities in products made of non-ferromagnetic materials
AIP conference proceedings·2016Open Access
Prospects for low noise and high speed InGaAs-on-silicon photodetectors
2004· 1 cited
Power limits of polarization-induced AlGaN/GaN HEMT's
2002· 1 cited
Effect of passivation on AlGaN/GaN HEMT device performance
2002· 18 cited
Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures
physica status solidi (b)·2001· 7 cited
Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures
physica status solidi (b)·2001
Playing with Polarity
physica status solidi (b)·2001· 180 cited
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
Journal of Applied Physics·2001· 21 citedOpen Access
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
Applied Physics Letters·2001· 62 citedOpen Access
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Materials Science and Engineering B·2001· 6 cited
Electron affinity of AlxGa1−xN(0001) surfaces
Applied Physics Letters·2001· 205 cited
Undoped AlGaN/GaN HEMTs for microwave power amplification
IEEE Transactions on Electron Devices·2001· 385 cited
AlGaN/GaN lateral polarity heterostructures
Springer proceedings in physics·2001
Ionization Energy and Electron Affinity of Clean and Oxidized Al<sub>x</sub>Ga<sub>1−x</sub>N(0001) Surfaces
MRS Proceedings·2001· 11 cited
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates
Applied Physics Letters·2000· 6 citedOpen Access
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Frequent Co-authors

O. Ambacher(42), M. Stutzmann(41), L.F. Eastman(16), W. J. Schaff(14), J. Smart(12), J. R. Shealy(12), Michael J. Murphy(11), H. Angerer(11), W. Rieger(10), K. Chu(7), W. Yeo(6), Nils Weimann(5), B. E. Foutz(5), V. Tilak(5), T. Metzger(5), Daniel Brunner(4), B. Green(4), C. R. Miskys(4), A. Cros(4), L.L. Wittmer(3)