M. Stutzmann

Schott (Germany) — Germany

Physics and Astronomy · Physical Sciences

86h-index34.6kcitations870works1.12yr avg
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Research Topics

GaN-based semiconductor devices and materials(244), Silicon Nanostructures and Photoluminescence(228), Thin-Film Transistor Technologies(203), Semiconductor materials and devices(174), Silicon and Solar Cell Technologies(132)

Publications870 total

Selective growth and characterization of GaN nanowires on SiC substrates
Journal of Crystal Growth·2025Open Access
Selective Growth and Characterization of Gan Nanowires on Sic Substrates
SSRN Electronic Journal·2025Open Access
Amorphous nitride semiconductors with highly tunable optical and electronic properties: the benefits of disorder in Ca–Zn–N thin films
Materials Horizons·2024Open Access
Silver-induced layer exchange and crystallization of a-Si films investigated using <i>in situ</i> scanning transmission electron microscopy
Journal of Applied Physics·2024
Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption
Applied Surface Science·2024Open Access
Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption Spectroscopy
ACS Applied Materials & Interfaces·2024· 8 citedOpen Access
Influencing the Surface Quality of Free-Standing Wurtzite Gallium Nitride in Ultra-High Vacuum: Stoichiometry Control by Ammonia and Bromine Adsorption
SSRN Electronic Journal·2024Open Access
Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
Advanced Materials Interfaces·2023· 3 citedOpen Access
Conversion of a 3D printer for versatile automation of dip coating processes
Review of Scientific Instruments·2023· 7 citedOpen Access
Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires
Nano Letters·2023· 13 cited
Morphology, Energy Level Alignment, and Charge Transfer at the Protoporphyrin IX–Semiconductor Interface
Langmuir·2023· 2 cited
Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxy
Nanotechnology·2023· 1 citedOpen Access
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
Nanoscale Advances·2023Open Access
Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina
Advanced Materials Interfaces·2022· 5 citedOpen Access
Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy
Journal of Applied Physics·2022· 13 citedOpen Access
Band Gap Control and Properties of Indium–Zinc Oxynitride Thin Films Grown by Molecular Beam Epitaxy
The Journal of Physical Chemistry C·2022· 5 cited
Photosynthesis
Graduate texts in physics·2022
Thermal Energy
Graduate texts in physics·2022
The Physics of Renewable Energy
Graduate texts in physics·2022· 6 citedOpen Access
Energy from Waves, Tides and Osmosis
Graduate texts in physics·2022· 1 cited
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Frequent Co-authors

O. Ambacher(23), R. Dimitrov(12), Martin Eickhoff(10), Martin S. Brandt(9), José A. Garrido(8), L.F. Eastman(6), J. Schalwig(6), W. J. Schaff(5), H. Angerer(5), J. Smart(4), J. R. Shealy(4), Michael J. Murphy(4), Moritz V. Hauf(4), Gustav Steinhoff(4), Gerhard Müller(4), Nils Weimann(3), K. Chu(3), Martin Hermann(3), R. Höpler(3), T. Metzger(3)