H. Angerer

Schott (Germany) — Germany

Physics and Astronomy · Physical Sciences

20h-index2.5kcitations38works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Metal and Thin Film Mechanics(13), Semiconductor Quantum Structures and Devices(8), ZnO doping and properties(8), Ga2O3 and related materials(8)

Publications38 total

Magnetic resonance investigations of defects in Ga14N and Ga15N
Journal of Applied Physics·2000· 3 cited
Disorder-Activated Scattering and Two-Mode Behavior in Raman Spectra of Isotopic GaN and AlGaN
physica status solidi (b)·1999· 18 cited
Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films
physica status solidi (b)·1998· 2 cited
Thermopower investigation of<i>n</i>- and<i>p</i>-type GaN
Physical review. B, Condensed matter·1998· 52 cited
Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves
Journal of Applied Physics·1998· 64 cited
Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements
Applied Physics Letters·1998· 258 cited
Nitrogen Effusion and Self-Diffusion in Ga<sup>14</sup>N/Ga<sup>15</sup>N Isotope Heterostructures
Japanese Journal of Applied Physics·1998· 45 cited
X-ray Standing Waves Polarity Determination of GaN Thin Film grown by MBE on Sapphire(0001)
APS March Meeting Abstracts·1998
Spectroscopic ellipsometry measurements of Al Ga1−N in the energy range 3–25 eV
Thin Solid Films·1998· 61 cited
Electrical and structural properties of AlGaN: A comparison with CVD diamond
Diamond and Related Materials·1998· 5 cited
Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al<sub>2</sub>O<sub>3</sub>(0001)
Japanese Journal of Applied Physics·1998· 35 cited
Properties and applications of MBE grown AlGaN
Materials Science and Engineering B·1997· 57 cited
Optical constants of epitaxial AlGaN films and their temperature dependence
Journal of Applied Physics·1997· 594 cited
Influence of magnesium doping on the structural properties of GaN layers
Journal of Crystal Growth·1997· 29 cited
Raman study of the optical phonons in AlxGa1−xN alloys
Solid State Communications·1997· 65 cited
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
Applied Physics Letters·1997· 308 citedOpen Access
Abstracts of <i>MRS Internet Journal of Nitride Semiconductor Research</i>, Volume 1, Articles 15–25
MRS Bulletin·1997Open Access
Characterisation of Al<sub>x</sub>Ga<sub>1-x</sub>N Films Prepared by Plasma Induced Molecular Beam Epitaxy on C-Plane Sapphire
MRS Proceedings·1997
Raman characterization of the optical phonons in Al<sub>x</sub>Ga<sub>1−x</sub>N layers grown by MBE and MOCVD
MRS Internet Journal of Nitride Semiconductor Research·1997· 20 citedOpen Access
Laser-Processing for Patterned and Free-Standing Nitride Films
MRS Proceedings·1997· 17 cited
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Frequent Co-authors

O. Ambacher(31), M. Stutzmann(27), R. Dimitrov(12), W. Rieger(6), F. Freudenberg(5), R. Höpler(5), E. Born(5), Martin S. Brandt(5), Daniel Brunner(4), A. Bergmaier(4), T. Metzger(4), M. K. Kelly(4), Thomas Metzger(3), A. Cros(3), N. M. Reinacher(3), R. Handschuh(3), G. Dollinger(2), S. Karsch(2), N. Ibl(2), A. Kazimirov(2)