Hee-Hwan Ji

Chungnam National University — South Korea

Engineering · Physical Sciences

7h-index106citations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(24), Semiconductor materials and interfaces(22), Silicon and Solar Cell Technologies(11), Advancements in Semiconductor Devices and Circuit Design(10), Integrated Circuits and Semiconductor Failure Analysis(8)

Publications32 total

Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications
IEEE Transactions on Nanotechnology·2008· 4 cited
New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs
IEEE Transactions on Electron Devices·2008· 10 cited
Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's
Japanese Journal of Applied Physics·2008· 2 cited
Investigation of Device Characteristics on the Mechanical Film Stress of Contact Etch Stop Layer in Nano-Scale CMOSFET
Journal of the Institute of Electronics Engineers of Korea·2008
Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability
IEEE Transactions on Nanotechnology·2007· 3 cited
Thermal Stability Improvement of Ni–Germano silicide Utilizing Ni–Pd Alloy for Nanoscale CMOS Technology
IEEE Transactions on Nanotechnology·2007· 5 cited
New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET’s
2007
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
2006
Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology
2006
On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano cmos technology
2006· 9 cited
Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
Japanese Journal of Applied Physics·2006· 2 cited
Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology
2006
Novel test structures for on-chip characterization of coupling capacitance variation by in- and anti-phase crosstalk in multi-level metallization
2006· 1 cited
The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide
Journal of The Electrochemical Society·2005· 11 cited
Highly thermal robust ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application
2005
Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
Japanese Journal of Applied Physics·2005· 7 cited
Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
Japanese Journal of Applied Physics·2005· 1 cited
Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer
IEEE Electron Device Letters·2005· 14 cited
Ni/Co/Ni/TiN structure for highly thermal immune NiSi for CMOSFETs application
2005
Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
Japanese Journal of Applied Physics·2004· 6 cited
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Frequent Co-authors

Jang-Gn Yun(18), Hi-Deok Lee(18), Jin-Suk Wang(17), Soon-Young Oh(16), Bin-Feng Huang(15), Han-Seob Cha(15), Jeong‐Gun Lee(14), Hi‐Deok Lee(14), Ui-Sik Kim(9), Sung-Hyung Park(9), Sang-Bum Heo(8), Heui-Seung Lee(6), Dae-Byung Kim(6), Won‐Ho Choi(6), Seong-Hyung Park(5), Sang-Bum Hu(5), Won‐Jae Lee(5), In‐Shik Han(5), Yonggoo Kim(5), Young-Seok Kang(5)