I. S. T. Tsong

Arizona State University — United States

Engineering · Physical Sciences

38h-index4.8kcitations230works0.02yr avg
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Research Topics

Ion-surface interactions and analysis(85), Semiconductor materials and devices(61), GaN-based semiconductor devices and materials(42), Metal and Thin Film Mechanics(40), Surface and Thin Film Phenomena(36)

Publications230 total

Cross-Sectional Characterization of Defects in GaN MQW LEDs
Microscopy and Microanalysis·2012
InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
Journal of Applied Physics·2012· 25 cited
InxGa1-xN Multiple-Quantum-Well Light-Emitting Diodes Grown on Si(111) Substrates.
Journal of Applied Physics·2011
Gallium Nitride Light-Emitting Diodes Grown on Silicon Substrates
Bulletin of the American Physical Society·2008
Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers
Journal of Applied Physics·2007· 6 cited
Effect of nitridation on the molecular beam epitaxy growth of GaN on ZrB 2 (0001)/Si(111)
APS·2007
Effect of nitridation on the growth of GaN on ZrB2(0001)∕Si(111) by molecular-beam epitaxy
Journal of Applied Physics·2006· 18 cited
Synthesis of Butane‐Like SiGe Hydrides: Enabling Precursors for CVD of Ge‐Rich Semiconductors.
ChemInform·2006Open Access
Synthesis of Butane-Like SiGe Hydrides:  Enabling Precursors for CVD of Ge-Rich Semiconductors
Journal of the American Chemical Society·2006· 29 cited
Surface and interface studies of GaN growth on ZrB$_{2}$(0001)/Si(111)
Bulletin of the American Physical Society·2006
Thermal decay of superheated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:math>islands and supercooled “<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:math>” vacancy islands on Si(111)
Physical Review B·2005· 8 cited
Surface and Interface Studies of GaN Epitaxy on Si(111) via<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>ZrB</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>Buffer Layers
Physical Review Letters·2005· 54 cited
First-principles studies of GaN(0001) heteroepitaxy on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Zr</mml:mi><mml:msub><mml:mi mathvariant="normal">B</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>
Physical Review B·2005· 40 cited
Synthesis and Fundamental Studies of (H<sub>3</sub>Ge)<sub>x</sub>SiH<sub>4‐x</sub> Molecules: Precursors to Semiconductor Hetero‐ and Nanostructures on Si.
ChemInform·2005
Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB<sub>2</sub> Templates
Chemistry of Materials·2005· 15 cited
Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation
Applied Physics Letters·2005· 8 cited
Synthesis and Fundamental Studies of (H<sub>3</sub>Ge)<i><sub>x</sub></i>SiH<sub>4</sub><sub>-</sub><i><sub>x</sub></i> Molecules:  Precursors to Semiconductor Hetero- and Nanostructures on Si
Journal of the American Chemical Society·2005· 36 cited
Epitaxial film growth of zirconium diboride on Si(001)
Journal of Crystal Growth·2005· 18 cited
Epitaxial Growth of ZrB 2 (0001) on Si(111) for III-nitride Applications: A Review
2005· 5 cited
ZrB2(0001)上,GaN(0001)ヘテロエピタクシーの第一原理研究
Physical Review B·2005· 9 cited
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Frequent Co-authors

A. V. G. Chizmeshya(5), John Kouvetakis(5), N. J. Zheng(4), U. Knipping(4), Joseph W. Michels(4), I. H. Wilson(3), Yeseul Hong(3), E. Bauer(3), J. Tolle(3), J. A. Pryde(3), Takeshi Sakurai(3), Q. K. Xue(3), Yukio Hasegawa(3), David J. Smith(3), Sean Hearne(2), Eric Chason(2), Jung Han(2), D. J. Barber(2), L. Li(2), Harold J. W. Zandvliet(2)