J. Tolle

Technical University of Munich — Germany

Engineering · Physical Sciences

27h-index2.2kcitations66works0.32yr avg
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Research Topics

Photonic and Optical Devices(29), Semiconductor materials and devices(27), Silicon Nanostructures and Photoluminescence(13), Nanowire Synthesis and Applications(13), Semiconductor materials and interfaces(12)

Publications66 total

Bee on Boron—Sufficient Boron Supply of <i>Brassica napus</i> Is Crucial for Attracting Pollinating Insects to Ensure Seed Yield
Ecology and Evolution·2026Open Access
Borax Promotes Fertility of <i>Brassica napus</i> Better Than Other Boron Species at Suboptimal Supply
Journal of Plant Nutrition and Soil Science·2025· 1 citedOpen Access
A National Programme for Improving the Quality of Teacher Education
2024Open Access
Institutionalisierung der Lehrkräftebildung: die „Qualitätsoffensive Lehrerbildung“ und Schools of Education
Bildung und Erziehung·2023· 1 cited
Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices
2019· 1 cited
Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-Sn thin films on a Ge/Si(001) substrate
Acta Materialia·2019· 23 cited
Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
ECS Journal of Solid State Science and Technology·2019· 29 citedOpen Access
Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Journal of Crystal Growth·2017· 49 cited
H_2とN_2キャリアガス中の減圧CVDによる低欠陥と歪緩和GeSn成長の研究【Powered by NICT】
Journal of Crystal Growth·2017
Si‐based Ge <sub>0.9</sub> Sn <sub>0.1</sub> photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
Electronics Letters·2015· 53 cited
Si based GeSn light emitter: mid-infrared devices in Si photonics
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 21 cited
Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs
2012· 13 cited
Electrical characterization of GeSn grown on Si using ultra high vacuum chemical vapor deposition method
Bulletin of the American Physical Society·2011
Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
Applied Physics Letters·2011· 94 cited
Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
Applied Physics Letters·2010· 181 cited
ChemInform Abstract: Synthesis and Optical Properties of Amorphous Si<sub>3</sub>N<sub>4‐x</sub>P<sub>x</sub> Dielectrics and Complementary Insights from ab initio Structural Simulations.
ChemInform·2010
(Invited) Si-Ge-Sn Technologies: From Molecules to Materials to Prototype Devices
ECS Transactions·2010· 8 cited
Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices
IEEE photonics journal·2010· 27 citedOpen Access
Synthesis and Optical Properties of Amorphous Si<sub>3</sub>N<sub>4−<i>x</i></sub>P<sub><i>x</i></sub>Dielectrics and Complementary Insights from<i>ab Initio</i>Structural Simulations
Chemistry of Materials·2010· 2 cited
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Frequent Co-authors

John Kouvetakis(36), J. Menéndez(28), A. V. G. Chizmeshya(25), Vijay Richard D’Costa(18), Radek Roucka(15), I. S. T. Tsong(10), C. D. Poweleit(8), J. Kouvetakis(8), Yanyan Fang(7), Peter A. Crozier(7), David J. Smith(6), Jay Mathews(5), Chih‐Wei Hu(5), I. S. T. Tsong(5), Cole Ritter(5), J. Margetis(5), Shui-Qing Yu(5), Stefan Zollner(4), C. Cook(4), Jesse Tice(4)