Fee Li Lie

IBM (United States) — United States

Engineering · Physical Sciences

7h-index328citations16works0.02yr avg
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Research Topics

Semiconductor materials and devices(11), Integrated Circuits and Semiconductor Failure Analysis(4), Semiconductor Quantum Structures and Devices(3), Advancements in Semiconductor Devices and Circuit Design(3), Advanced Surface Polishing Techniques(3)

Publications16 total

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects
IMAPSource Proceedings·2024Open Access
Next Generation Infrared (IR) Laser Debonding / Silicon Handle Technology for Precision Chiplet Technology Applications
2023· 5 cited
HERMES-Core—A 1.59-TOPS/mm<sup>2</sup> PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs
IEEE Journal of Solid-State Circuits·2022· 122 citedOpen Access
CMP Defect Reduction and Mitigation: Practices and Future Trends
2021· 5 cited
A Systematic Study on BEOL Defectivity Control for Future AI Application
2020· 1 cited
SiGe FinFET for practical logic libraries by mitigating local layout effect
2017· 10 cited
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
2016· 10 cited
Directed self-assembly patterning for forming fin field effect transistors
SPIE Newsroom·2016· 1 cited
DSA patterning options for FinFET formation at 7nm node
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2016· 11 cited
Fin formation using graphoepitaxy DSA for FinFET device fabrication
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 9 cited
Interfacial chemistry of hydrofluoric acid-treated In0.53Ga0.47As(100) during atomic layer deposition of aluminum oxide
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2012· 5 cited
Oxide Removal and Selective Etching of In from InSb(100) with TiCl<sub>4</sub>
The Journal of Physical Chemistry C·2011· 6 cited
Controlled Oxide Removal and Surface Morphology on InSb(100) Using Gas Phase HF/H<sub>2</sub>O
The Journal of Physical Chemistry C·2011· 12 cited
Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition
UA Campus Repository (The University of Arizona)·2011
Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films
IEEE Transactions on Electron Devices·2010· 6 cited
Water-Based Route to Ligand-Selective Synthesis of ZnSe and Cd-Doped ZnSe Quantum Dots with Tunable Ultraviolet A to Blue Photoluminescence
Langmuir·2008· 125 cited

Frequent Co-authors

Anthony J. Muscat(5), Chi‐Chun Liu(3), Elliott Franke(3), Hsinyu Tsai(3), Kafai Lai(3), Richard A. Farrell(3), Mark Somervell(3), Nelson Felix(3), Michael Guillorn(3), Sean Burns(3), David Hetzer(3), Matthew Colburn(3), Vijay Narayanan(2), Stuart Sieg(2), Hoa Truong(2), Daniel P. Sanders(2), Akiteru Ko(2), John Arnold(2), Gen Tsutsui(2), Huimei Zhou(2)