Jiaren Feng

Wuhan University of Technology — China

Materials Science · Physical Sciences

2h-index10citations17works0.62yr avg
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Research Topics

Ga2O3 and related materials(11), Advanced Photocatalysis Techniques(4), ZnO doping and properties(3), GaN-based semiconductor devices and materials(3), Semiconductor materials and interfaces(3)

Publications17 total

Supplemenrary Material
AIP Publishing·2026Open Access
<strong>Theoretical insights into <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction</strong>
AIP Publishing·2026Open Access
<strong>Theoretical insights into <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction</strong>
AIP Publishing·2026Open Access
Supplemenrary Material
AIP Publishing·2026Open Access
Theoretical insights into β-Ga2O3/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction
Applied Physics Letters·2026
Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/ <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Schottky contacts
Journal of Semiconductors·2026
Atomic Insights of Irradiation-Induced Thermal Conductivity Degradation in β-Ga <sub>2</sub> O <sub>3</sub>
The Journal of Physical Chemistry Letters·2026
Explainable Analysis and Optimization of the Thermal Field in Gallium Oxide Single Crystal Growth Based on Machine Learning
Crystal Growth & Design·2026
Anisotropic Kinetics of Ion-Irradiation-Induced Phase Transition in Gallium Oxide
ArXiv.org·2026Open Access
Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization
Rare Metals·2026Open Access
Anisotropic Kinetics of Ion-Irradiation-Induced Phase Transition in Gallium Oxide
arXiv (Cornell University)·2026Open Access
Polarization-engineered electron transport in <i>β</i> -Ga2O3/SiC heterojunctions: Atomic-scale modulation via SiC polymorphic selection
Applied Physics Letters·2025· 1 cited
Band Alignment Engineering in β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping
The Journal of Physical Chemistry Letters·2025· 1 cited
Orientation-dependent surface radiation damage in β-Ga2O3 explored by atomistic simulations
Acta Materialia·2025· 2 cited
Metal contacts and Schottky barriers at <i>β</i>-Ga2O3 interfaces: High-throughput-assisted first-principles calculations
Journal of Applied Physics·2025· 5 citedOpen Access
Radiation resistance and defect evolution in bulk <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>: a molecular dynamics study
Journal of Physics D Applied Physics·2025· 1 cited
Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations
arXiv (Cornell University)·2024Open Access

Frequent Co-authors

Taiqiao Liu(8), Yuzheng Guo(6), Zhaofu Zhang(5), Sheng Liu(4), Xiaoyu Fei(4), Wei Yu(4), E Zhou(4), Xi Tang(4), Jianbo Liang(4), Xing Li(4), Shaobo Cheng(4), Yuzheng Guo(4), John Robertson(4), Sheng Liu(4), Zhaofu Zhang(4), Qingzhong Gui(3), Zeyuan Li(3), J. Zhao(3), Y L Zuo(3), Junlei Zhao(3)