Qingzhong Gui

Hunan University — China

Materials Science · Physical Sciences

7h-index214citations32works2.12yr avg
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Research Topics

Electronic and Structural Properties of Oxides(13), Semiconductor materials and devices(12), Ga2O3 and related materials(7), ZnO doping and properties(6), Diamond and Carbon-based Materials Research(6)

Publications32 total

Polarization-engineered electron transport in <i>β</i> -Ga2O3/SiC heterojunctions: Atomic-scale modulation via SiC polymorphic selection
Applied Physics Letters·2025· 1 cited
Current Balancing and Voltage Oscillation Suppression of Parallel SiC MOSFETs With Compact Coupled Inductors
IEEE Journal of Emerging and Selected Topics in Power Electronics·2025
Band Alignment Engineering in β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping
The Journal of Physical Chemistry Letters·2025· 1 cited
Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects
Applied Physics Letters·2025
Development of A Novel Analytical Trapped Charge Model for Total Ionizing Dose Effects of SiC MOSFETs
2025
An Electro-Thermal Coupling Model of Trench Gate SiC MOSFETs
2025
Theoretical Study on the Interface and Transport Properties of Ti₃AuC₂ MAX Phase/4H-SiC Heterostructures for High-Temperature Power Device Applications
IEEE Transactions on Electron Devices·2025· 2 cited
Theoretical insights into the interface performance of Ga2O3/ZnO heterostructure photodetectors driven by polarization and strains
Computational Materials Science·2025· 1 citedOpen Access
Metal contacts and Schottky barriers at <i>β</i>-Ga2O3 interfaces: High-throughput-assisted first-principles calculations
Journal of Applied Physics·2025· 5 citedOpen Access
Theoretical insights into the interface engineering of β-Ga2O3 devices with ferroelectric HfO2 gate dielectric: Impact of polarization direction
Surfaces and Interfaces·2024· 5 cited
TeO<sub>2</sub> as Amorphous P-Type Transistor for Back-End-of-Line Applications
2024
Structural design and electronic performance at MO /diamond (M = Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications
Applied Surface Science·2024· 4 cited
Amorphous TeO&lt;sub&gt;2&lt;/sub&gt; as P-type Wide-gap Oxide BEOL Semiconductor
2024
Amorphous TeO2 as p-type oxide semiconductor for device applications
Applied Physics Letters·2024· 9 citedOpen Access
Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending
Journal of Material Science and Technology·2024· 7 cited
Theoretical Insight into the Band Alignment at High-κ Oxide XO<sub>2</sub>/Diamond (X = Hf and Zr) Interfaces with a SiO<sub>2</sub> Interlayer for MOS Devices
ACS Applied Materials & Interfaces·2024· 2 cited
Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics
Journal of Material Science and Technology·2024· 3 cited
Theoretical Insights into the Interface Engineering of Β-Ga2o3 Devices with the Ferroelectric Hfo2 Gate Dielectric: Impact of Polarization Direction
SSRN Electronic Journal·2024Open Access
Theoretical Insights into the Interface Engineering of Β-Ga2o3 Devices with the Ferroelectric Hfo2 Gate Dielectric: Impact of Polarization Direction
SSRN Electronic Journal·2024Open Access
High-throughput interface prediction and generation scheme: The case of <b> <i>β</i> </b>-Ga2O3/AlN interfaces
Applied Physics Letters·2023· 6 cited
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Frequent Co-authors

Zhaofu Zhang(21), Yuzheng Guo(21), John Robertson(16), Sheng Liu(14), Wei Yu(13), Xuhao Wan(9), Jinhao Su(8), Chunmin Cheng(7), Hailing Guo(6), Ruyue Cao(6), Zeyuan Li(4), Anyang Wang(4), Zhen Wang(4), Xiaoming Zha(4), Yuzheng Guo(4), Xin Yang(4), Gai Wu(3), Lingzhi Yi(3), Hongxia Zhong(3), Jiaren Feng(3)