W. J. Maeng

University of Wisconsin–Madison — United States

Engineering · Physical Sciences

24h-index3.2kcitations59works0.02yr avg
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Research Topics

Semiconductor materials and devices(42), Thin-Film Transistor Technologies(23), ZnO doping and properties(16), Electronic and Structural Properties of Oxides(12), Ferroelectric and Negative Capacitance Devices(10)

Publications59 total

Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films
Applied Physics Letters·2021· 3 citedOpen Access
Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films
arXiv (Cornell University)·2021· 10 citedOpen Access
High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation
Metals and Materials International·2018· 1 cited
Giant Piezoelectricity Driven Magnetoelectric Coupling in a Multiferroic Heterostructure Membrane
Bulletin of the American Physical Society·2017
Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopy
Journal of Applied Physics·2017· 3 citedOpen Access
Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors
IEEE Electron Device Letters·2016· 4 cited
Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films
Applied Physics Letters·2016· 10 cited
Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties
Ceramics International·2015· 73 cited
Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant
Journal of Alloys and Compounds·2015· 64 cited
Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant
Ceramics International·2015· 52 cited
The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics
Applied Surface Science·2014· 60 cited
Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
Ceramics International·2014· 51 cited
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
Applied Surface Science·2013· 38 cited
Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition
Journal of Electroceramics·2013· 25 cited
Highly (111)-oriented multiferroic BiFeO3 thin film on a glass substrate
Journal of Crystal Growth·2013· 9 cited
Tetragonally strained BiFeO3 thin film on single crystal Rh substrate
Journal of Crystal Growth·2012· 9 cited
Effects of Postannealing Process on the Properties of RuO<sub>2</sub> Films and Their Performance As Electrodes in Organic Thin Film Transistors or Solar Cells
ACS Applied Materials & Interfaces·2012· 24 cited
Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2012· 26 cited
Room temperature ferroelectricity of tetragonally strained SrTiO3 thin films on single crystal Rh substrates
Solid State Communications·2012· 17 cited
Enhanced ferroelectric polarization in tetragonally strained NaNbO3 thin film on single crystal Rh substrate
Journal of Crystal Growth·2012· 17 cited
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Frequent Co-authors

Joon Seok Park(11), Hyun‐Suk Kim(11), Hyungjun Kim(10), Jin‐Seong Park(9), Woo‐Hee Kim(9), Tae Sang Kim(9), Kyoung Seok Son(9), Sangyoon Lee(9), Hyungjun Kim(8), Jong Yeog Son(8), H. Kim(6), Eok Su Kim(6), Kyung‐Bae Park(6), Kwanghee Lee(5), Myung Kwan Ryu(5), Min‐Kyu Kim(4), Jang‐Yeon Kwon(4), Jong‐Baek Seon(3), Jozeph Park(3), Ji Sim Jung(3)