Kyoung Seok Son

Samsung (South Korea) — South Korea

Engineering · Physical Sciences

22h-index1.9kcitations40works5.02yr avg
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Research Topics

Thin-Film Transistor Technologies(38), ZnO doping and properties(23), Semiconductor materials and devices(22), Silicon and Solar Cell Technologies(7), Transition Metal Oxide Nanomaterials(4)

Publications40 total

Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display
Journal of Information Display·2024· 5 citedOpen Access
Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy
Journal of Applied Physics·2021· 12 cited
Hydrogen Behavior in Top Gate Amorphous In–Ga–Zn–O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching
IEEE Transactions on Electron Devices·2021· 15 cited
The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors
IEEE Electron Device Letters·2018· 12 cited
Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation
Applied Physics Letters·2017· 23 cited
Investigation of Low-Frequency Noise Properties in High Mobility ZnON Thin-Film Transistors
IEEE Electron Device Letters·2016· 2 cited
Correction: Corrigendum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
Scientific Reports·2014· 4 citedOpen Access
Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
Scientific Reports·2014· 94 citedOpen Access
High performance gallium-zinc oxynitride thin film transistors for next-generation display applications
2013· 26 cited
Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2013· 8 cited
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
Scientific Reports·2013· 165 citedOpen Access
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
Journal of Physics D Applied Physics·2012· 80 cited
High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications
2012· 30 cited
Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability
ACS Applied Materials & Interfaces·2012· 73 cited
Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
Applied Physics Letters·2012· 59 cited
The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination
IEEE Electron Device Letters·2011· 19 cited
High Performance and Stability of Amorphous Hf-In-Zn-O Thin Film Transistors under Illumination
ECS Meeting Abstracts·2011Open Access
The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf–In–Zn–O TFTs
IEEE Electron Device Letters·2011· 24 cited
Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array
Current Applied Physics·2011· 13 cited
Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition
Applied Physics Letters·2011· 12 cited
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Frequent Co-authors

Tae Sang Kim(29), Joon Seok Park(25), Sangyoon Lee(21), Hyun‐Suk Kim(19), Ji Sim Jung(14), Eok Su Kim(12), Myung Kwan Ryu(11), Jang‐Yeon Kwon(10), Kyung‐Bae Park(10), Myungkwan Ryu(10), W. J. Maeng(10), Bonwon Koo(9), Jong‐Baek Seon(9), Kwang-Hee Lee(7), Jae Kyeong Jeong(6), Eunha Lee(6), Rino Choi(5), Sangyun Lee(5), Jang Yeon Kwon(5), Kwanghee Lee(5)