K.‐J. RANGE

University of Regensburg — Germany

Chemistry · Physical Sciences

19h-index1.1kcitations196works0.02yr avg
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Research Topics

Inorganic Chemistry and Materials(58), Crystal Structures and Properties(49), Rare-earth and actinide compounds(23), Iron-based superconductors research(21), Advanced Condensed Matter Physics(19)

Publications196 total

Comparison of different gettering techniques for Cu- p+ versus polysilicon and oxygen precipitates
Applied Physics A·2002· 8 cited
Modeling of Cu gettering in p- and n-type silicon and in poly-silicon
Applied Physics A·2002· 20 cited
TOPOLOGICAL PROPERTIES AND ELECTRONIC STRUCTURES OF COMPOUNDS WITH PYRITE-TYPE CRYSTAL STRUCTURES
2002· 4 cited
Ni reactions with surfaces: dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments
Applied Physics A·2002· 5 cited
MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?
Applied Physics A·2002· 2 cited
The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers
Applied Physics A·2002· 6 cited
High Temperature Powder X-Ray Diffraction of MZnPO<sub>4</sub> Compounds (M = Na, K, Tl)
Materials science forum·2001· 5 cited
Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers
Applied Physics A·2001· 14 cited
Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation –
Microelectronic Engineering·2001· 2 cited
Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
Applied Physics A·2001· 19 cited
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Materials Science and Engineering B·2000· 20 cited
ChemInform Abstract: High Pressure Synthesis of Molybdenum Nitride MoN.
ChemInform·2000
Gettering of Copper and Nickel in p/p+ Epitaxial Wafers
Journal of The Electrochemical Society·2000· 32 citedOpen Access
High pressure synthesis of molybdenum nitride MoN
Journal of Alloys and Compounds·2000· 40 cited
Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012   Atom / cm2 Range
Journal of The Electrochemical Society·1999· 23 cited
ChemInform Abstract: Stannylated α‐Pyrones: Synthesis, Halogenation and Destannylation Reactions.
ChemInform·1999
Ba–Ca–Cu oxycarbonate thin films, prepared by pulsed laser deposition: structure, growth mechanism and superconducting properties
Physica C Superconductivity·1999· 16 cited
CCDC 116365: Experimental Crystal Structure Determination
The Cambridge Structural Database·1999Open Access
ChemInform Abstract: Synthesis and Thermodynamic Characteristics of LaSrNiO<sub>4</sub>.
ChemInform·1998
Synthesis and thermodynamic characteristics of LaSrNiO4
Thermochimica Acta·1998· 22 cited
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Frequent Co-authors

Ulrich Klement(10), L. Fabry(9), Franz Rau(7), A.M. Heyns(6), Robert Hoelzl(4), A. Weiss(4), D. de Waal(3), G. H. Grosch(3), R. Hölzl(3), Gary L. Doll(3), J. Baumann(3), M. Zabel(3), G. Gliemann(2), W. Abriel(2), D. Huber(2), J. Hage(2), E. Bücher(2), C. Eglmeier(2), W. Becker(2), Kurt G. Lange(2)