D. Huber

Engineering · Physical Sciences

6h-index169citations20works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon and Solar Cell Technologies(14), Integrated Circuits and Semiconductor Failure Analysis(9), Semiconductor materials and devices(7), Semiconductor materials and interfaces(5), Thin-Film Transistor Technologies(4)

Publications20 total

Gettering of Fe, Cu, and Ni by high dose boron buried layers
2002· 2 cited
Extended defects in silicon by MeV B++ implantation in different 8" Cz-Si wafers
2002· 2 cited
Effective gettering of oxygen by high dose, high energy boron buried layers
2002· 2 cited
Gettering of Copper and Nickel in p/p+ Epitaxial Wafers
Journal of The Electrochemical Society·2000· 32 citedOpen Access
Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012   Atom / cm2 Range
Journal of The Electrochemical Society·1999· 23 cited
Oxygen Precipitation Characterization Using the Elymat Technique
1998
Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique
Journal of Applied Physics·1997· 5 cited
Iron detection in polished and epitaxial silicon wafers using generation lifetime measurements
Journal of Applied Physics·1997· 15 cited
<title>Oxygen precipitation and denuded zone characterization with ELYMAT technique</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1995
Similarities and differences in the field-induced doping effect of n-type and of intrinsic a-Si : H
Journal of Non-Crystalline Solids·1991
Computer simulation of oxygen precipitation in CZ-silicon during rapid thermal anneals
1990
Simulation of oxygen precipitation in Czochralski grown silicon
Materials Science and Engineering B·1989· 12 cited
Dispersive microwave transient spectroscopy of deep levels in semiconductors
Materials Science and Engineering B·1989· 3 cited
Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H
Materials science forum·1989· 1 cited
Characterization of Deep Levels by Microwave Absorption Spectroscopy
Materials science forum·1986· 3 cited
Wafer Design and Characterization for Integrated-Circuit Processes
ACS symposium series·1985
Determination of Oxygen in Silicon by Photon Activation Analysis for Calibration of the Infrared Absorption
Journal of The Electrochemical Society·1984· 19 cited
Assessment of Metallic Trace Contaminants on Silicon Wafer Surfaces
MRS Proceedings·1984· 4 cited
Characterization of Denuded Zones in Silicon Wafers
MRS Proceedings·1984
Deep Level Luminescence Ralated to Thermal Donors in Silicon
Japanese Journal of Applied Physics·1983· 46 cited

Frequent Co-authors

G. Obermeier(4), P. Stallhofer(3), J. Hage(3), P. Eichinger(3), L. Rubin(3), R. Pech(3), J. Brunner(3), K.‐J. RANGE(2), L. Fabry(2), M. Schrems(2), M. Budil(2), H. Pötzl(2), E. Guerrero(2), P. Pongratz(2), Juergen Hage(2), H. J. Rath(2), G. Ferenczi(2), Wesley Morris(2), G. Zentai(2), J. Reffle(2)