M. Schrems

AMS (Austria) — Austria

Engineering · Physical Sciences

8h-index178citations26works0.02yr avg
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Research Topics

Semiconductor materials and devices(9), Advancements in Semiconductor Devices and Circuit Design(9), Silicon and Solar Cell Technologies(7), Gas Sensing Nanomaterials and Sensors(5), Advanced Chemical Sensor Technologies(4)

Publications26 total

Manufacturing and characterization of die to die interconnections for 3D applications in harsh environmental conditions
2016
CMOS integrated tungsten oxide nanowire networks for ppb-level hydrogen sulfide sensing
2016· 1 cited
Bimetallic nanoparticles for optimizing CMOS integrated SnO<inf>2</inf> gas sensor devices
2014· 3 cited
Manufacturing of 3D integrated sensors and circuits
2014· 3 cited
Optimization of CMOS Integrated Nanocrystalline SnO2 Gas Sensor Devices with Bimetallic Nanoparticles
Procedia Engineering·2014· 12 citedOpen Access
On an improved boron segregation calibration from a particularly sensitive power MOS process
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 2 cited
Metal oxide nanowire gas sensors for indoor and outdoor environmental monitoring
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2013· 2 cited
METROLOGY REQUIREMENTS FOR MANUFACTURING 3D INTEGRATED CIRCUITS
2013· 1 cited
Tin oxide nanosensors for highly sensitive toxic gas detection and their 3D system integration
Microelectronic Engineering·2011· 30 cited
Cost Effective High-Voltage IC Technology Implemented in a Standard CMOS Process
Springer proceedings in physics·2011· 4 cited
A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
International Symposium on Power Semiconductor Devices and IC's·2010· 34 cited
システム-オン-チップ集積化用120V 180nm高電圧CMOSスマートパワー技術
International Symposium on Power Semiconductor Devices and IC's·2010
Evidence of erratic behaviors in p-channel floating gate memories and a cell architectural solution
2009· 2 cited
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors
IET Circuits Devices & Systems·2008· 7 cited
Scalable High Voltage CMOS technology for Smart Power and sensor applications
e+i Elektrotechnik und Informationstechnik·2008· 12 cited
Embedded Non-Volatile memory modules for low voltage and high temperature applications
2006· 7 cited
A Non-Volatile Embedded Memory for High Temperature Automotive and High-Retention Applications
2006· 7 cited
High-speed blue-, red-, and infrared-sensitive photodiode integrated in a 0.35 μm SiGe:C-BiCMOS process
2006· 4 cited
FlexRay Transceiver in a 0.35µm CMOS High-Voltage Technology
2006· 11 cited
A numerical study of oxygen precipitation in CZ-silicon: LO-HI and CMOS-type thermal cycles
2002
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Frequent Co-authors

Franz Schrank(7), E. Wachmann(7), Rainer Minixhofer(6), M. Knaipp(6), H. Enichlmair(5), J. Siegert(5), E. Brunet(4), Stephan Steinhauer(4), F.P. Leisenberger(4), Gregor Schatzberger(4), M. Budil(4), H. Pötzl(4), Jochen Kraft(4), G. Röhrer(3), E. Seebacher(3), Giorgio C. Mutinati(3), Anton Koeck(3), Karl Rohracher(3), V. Vescoli(3), P. Pongratz(3)