Centre National de la Recherche Scientifique — France
Engineering · Physical Sciences
23h-index1.3kcitations203works0.02yr avg
Accepting Students?
No reports yet. Know if this professor is taking students?
Research Topics
Semiconductor materials and devices(133), Plasma Diagnostics and Applications(81), Metal and Thin Film Mechanics(52), Copper Interconnects and Reliability(51), Advancements in Semiconductor Devices and Circuit Design(48)
Publications203 total
ECS Meeting Abstracts·2020· 1 cited
Materials Science and Engineering B·2020· 4 citedOpen Access
Development and optimization of the Smart Etch concept for SiN spacer etching with high selectivity over Si and SiO2
HAL (Le Centre pour la Communication Scientifique Directe)·2019
ECS Journal of Solid State Science and Technology·2019· 8 cited
Etch process cleaning to improve wafer to wafer reproducibility
HAL (Le Centre pour la Communication Scientifique Directe)·2019
Microelectronic Engineering·2018· 7 cited
Study of High Selective Silicon Nitride Etching Mechanisms in Remote Plasmas: Impact of Wafer Temperature
HAL (Le Centre pour la Communication Scientifique Directe)·2018
Etching Mechanisms of Si Containing Materials in Remote Plasma Source using NF3 based Gas Mixture
HAL (Le Centre pour la Communication Scientifique Directe)·2018
Etch Selectivity Mechanisms of Implanted Over Pristine SiN Materials in NH3/NF3 Remote Plasma for Quasi Atomic Layer Etching with the Smart Etch Concept
HAL (Le Centre pour la Communication Scientifique Directe)·2018
Microelectronic Engineering·2017· 13 cited
VUV Broad-Band absorption spectroscopy in downstream plasma soft-etch reactor
Bulletin of the American Physical Society·2017
Damage Free Plasma Etching Processes of III-V Semiconductors for Microelectronic and Photonic Applications
HAL (Le Centre pour la Communication Scientifique Directe)·2017
Etching Mechanisms of SiN and SiO2 in NF3/NH3 downstream plasma
HAL (Le Centre pour la Communication Scientifique Directe)·2017
New trends in Plasma Technologies
HAL (Le Centre pour la Communication Scientifique Directe)·2017· 1 cited
Real time monitoring of NF3, NH3 and HF densities in the downstream of a soft-etch reactor by VUV Broad-Band absorption spectroscopy
HAL (Le Centre pour la Communication Scientifique Directe)·2017
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017· 2 cited
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017
Ultra-high selective etching in remote plasmas: application to smart etch processes
HAL (Le Centre pour la Communication Scientifique Directe)·2017
WET and SiconiTM cleaning sequences for SiGe pMOS channel
HAL (Le Centre pour la Communication Scientifique Directe)·2017
Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy
Bulletin of the American Physical Society·2016
page 1 of 11Next →
Frequent Co-authors
O. Joubert(30), G. Cunge(8), T. Chevolleau(8), E. Pargon(7), Maxime Darnon(7), N. Possémé(6), N. Sadeghi(5), Camille Petit‐Etienne(5), F. H. Bell(4), V. Loup(4), P. Besson(4), Madjid Akbal(4), G. Ribes(4), O. Joubert(3), X. Detter(3), Thorsten Lill(3), B. Pelissier(3), David Tormey(3), S. Vallon(3), C. Monget(3)