V. Gruz̆inskis

Center for Physical Sciences and Technology — LT

Physics and Astronomy · Physical Sciences

21h-index1.3kcitations159works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(102), Advancements in Semiconductor Devices and Circuit Design(64), Terahertz technology and applications(41), GaN-based semiconductor devices and materials(35), Semiconductor materials and devices(29)

Publications159 total

Monte Carlo Simulation of THz Radiation Detection in GaN MOSFET n<sup>+</sup>nn<sup>+</sup> Channel with Uncentered Gate in n-region
Journal of Physics Conference Series·2017· 3 citedOpen Access
Monte Carlo simulation of THz noise and generation under electron cooling in wurtzite GaN MOSFET at room temperature
2017
Stepped Current-Voltage Relation and THz Oscillations in GaN MOSFET Due to Optical Phonon Emission: Monte Carlo simulation
Journal of Physics Conference Series·2015· 2 citedOpen Access
Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors
Solid-State Electronics·2015
Drain current noise in GaN MOSFETs at THz generation conditions
2015
TeraHertz electronic noise in field-effect transistors
Journal of Computational Electronics·2014· 2 cited
Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions
2014· 2 cited
Toward an experimental measurement of the impedance field
2013
Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions
AIP conference proceedings·2013
Experiments and theory of terahertz transmission through multi-layer semiconductor structures
HAL (Le Centre pour la Communication Scientifique Directe)·2013
QUANTUM FLUCTUATION DISSIPATION THEOREM REVISITED: REMARKS AND CONTRADICTIONS
Fluctuation and Noise Letters·2012· 6 cited
Terahertz emission induced by optical beating in nanometer-length field-effect transistors
Journal of Applied Physics·2012· 16 citedOpen Access
Investigation of high-frequency small-signal characteristics of FETs/HEMTs
Semiconductor Science and Technology·2012· 16 cited
THz transmission modulated by a dc-bias through GaN quantum well structure
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012
Terahertz Emissions from Optically Excited Plasma Oscillations in HEMTs
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Hybrid 2D-3D plasmonic noise in a gated semiconductor slab
2011
Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
Acta Physica Polonica A·2011· 1 citedOpen Access
Small-Signal Characterization of FET/HEMT for Terahertz Applications
Acta Physica Polonica A·2011· 3 citedOpen Access
Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation
Acta Physica Polonica A·2011· 2 citedOpen Access
Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel
Acta Physica Polonica A·2011· 1 citedOpen Access
page 1 of 8Next →

Frequent Co-authors

P. Shiktorov(45), E. Starikov(43), L. Reggiani(25), L. Varani(19), L. Varani(18), J. C. Vaissière(16), T. González(12), C. Palermo(9), D. Pardo(8), H. Marinchio(7), J. Mateos(6), S. Pérez(6), Jian Hui Zhao(5), P. Nouvel(4), J. Torres(4), L. Reggiani(4), G. Sabatini(4), A. Reklaǐtis(3), J. P. Nougier(3), J.‐F. Millithaler(3)