Gyungseon Seol

Samsung (South Korea) — South Korea

Engineering · Physical Sciences

9h-index1.8kcitations21works0.02yr avg
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Research Topics

Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(8), Graphene research and applications(7), Semiconductor Quantum Structures and Devices(5), 2D Materials and Applications(5)

Publications21 total

A 1.04 - 4V, Digital-Intensive Dual-Mode BLE 5.0/IEEE 802.15.4 Transceiver SoC with extended range in 28nm CMOS
2019· 6 cited
Performance evaluation of MoS<inf>2</inf>-WTe<inf>2</inf> vertical tunneling transistor using real-space quantum simulator
2014· 10 cited
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe<sub>2</sub>
Nano Letters·2014· 718 cited
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Nano Letters·2013· 747 cited
Modeling of a vertical tunneling graphene heterojunction field-effect transistor
Applied Physics Letters·2012· 47 citedOpen Access
Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell
Applied Physics Letters·2012· 15 cited
Metal contact to graphene nanoribbon
Applied Physics Letters·2012· 12 cited
Performance projection of graphene nanomesh and nanoroad transistors
Nano Research·2012· 6 cited
Assessment of graphene nanomesh and nanoroad transistors by chemical modification
2011· 4 cited
Electrolyte-Induced Inversion Layer Schottky Junction Solar Cells
Nano Letters·2011· 88 cited
Bandgap opening in boron nitride confined armchair graphene nanoribbon
Applied Physics Letters·2011· 85 cited
Gate Length Reduction Technology for Pseudomorphic In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.7</sub>Ga<sub>0.3</sub>As High Electron Mobility Transistors
Japanese Journal of Applied Physics·2007· 2 cited
Passivation Effects of 100 nm In<sub>0.4</sub>AlAs/In<sub>0.35</sub>GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition
Japanese Journal of Applied Physics·2007· 6 cited
A high power performance 60 GHz push-push oscillator MMIC in metamorphic HEMT technology
2006· 1 cited
A 77 GHz Transceiver for Automotive Radar System Using a 120nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs
2006· 9 cited
The Gate Length Reducing Process for Pseudomorphic In_ Al_ As/In_ Ga_ As HEMTs
Medical Entomology and Zoology·2006
Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation
2006· 1 cited
40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process
2006
High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits
Japanese Journal of Applied Physics·2006· 6 cited
The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs
2006
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Frequent Co-authors

Jing Guo(10), Kwang-Seok Seo(9), Sungwon Kim(4), Seong-Jin Yeon(3), Jin-Cherl Her(3), Hui Fang(2), Ali Javey(2), Andrew G. Rinzler(2), Jongwon Lee(2), Kyoungchul Jang(2), Jongwon Lee(2), Kyung-chul Jang(2), Mahmut Tosun(1), Ting Chia Chang(1), Kuniharu Takei(1), Sujay B. Desai(1), Jeong Seuk Kang(1), Corsin Battaglia(1), Rehan Kapadia(1), Joel W. Ager(1)