T. Marieb

Materials Science · Physical Sciences

16h-index960citations64works0.02yr avg
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Research Topics

Copper Interconnects and Reliability(45), Electronic Packaging and Soldering Technologies(25), Semiconductor materials and devices(21), Metal and Thin Film Mechanics(14), Semiconductor materials and interfaces(9)

Publications64 total

Electroplating process for Cu chip metallization
2010
A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell
2005· 230 cited
Electroplating process for Cu chip metallization
New trends in electrochemical technology·2004
Microelectronic Packaging
2004· 49 cited
Electromigration lifetime and critical void volume
Applied Physics Letters·2004· 38 cited
A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers
2004· 8 cited
90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology
2004· 16 cited
Local Plasticity of Al Thin Films as Revealed by X-Ray Microdiffraction
Physical Review Letters·2003· 60 cited
The relationship between resistance changes and void volume changes in passivated aluminum interconnects
2003· 3 cited
Copper interconnection deposition techniques and integration
2002· 9 cited
High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction
Applied Physics Letters·2002· 87 citedOpen Access
Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride
Journal of Applied Physics·2002· 13 cited
Effects of dielectric materials on electromigration failure
Journal of Applied Physics·2001· 14 cited
Microtexture and strain in electroplated copper interconnects
eScholarship (California Digital Library)·2001· 1 cited
A high-voltage scanning electron microscopy system for <i>in situ</i> electromigration testing
Review of Scientific Instruments·2000· 16 cited
The evolution of the resistance of aluminum interconnects during electromigration
Microelectronics Reliability·2000· 22 cited
Microtexture and Strain in Electroplated Copper Interconnects
MRS Proceedings·2000· 17 cited
Grain orientation and strain measurements in micron wide passivated individual Al and Cu test structures
2000
Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration
MRS Proceedings·2000· 3 cited
The Effects of Width Transitions on the Reliability of Interconnects
MRS Proceedings·2000
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Frequent Co-authors

J. C. Bravman(29), P. A. Flinn(14), Paul A. Flinn(13), Jonathan C. Doan(10), Michael C. Madden(9), H. Fujimoto(7), Donald S. Gardner(6), Anne Sauter Mack(6), Nobumichi Tamura(5), Richard Celestre(5), H. A. Padmore(5), B. C. Valek(5), Ralph Spolenak(5), W. L. Brown(5), B. W. Batterman(5), J. R. Patel(5), Paul R. Besser(5), M. Bohr(4), Alastair A. MacDowell(4), Maria Ignat(4)